LBC847AWT1G Purpose Transistors Datasheet

LBC847AWT1G Datasheet, PDF, Equivalent


Part Number

LBC847AWT1G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 9 Pages
Datasheet
Download LBC847AWT1G Datasheet


LBC847AWT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION ( Pb– Free )
Device
LBC846AWT1G
S-LBC846AWT1G
LBC846AWT3G
S-LBC846AWT3G
Package
SC-70
SC-70
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
CWT1G
LBC848AWT1G,BWT1G
CWT1G
S-LBC846AWT1G,BWT1G
S-LBC847AWT1G,BWT1G
CWT1G
S-LBC848AWT1G,BWT1G
CWT1G
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
3
1
2
SOT–323 /SC–70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
T J , T stg
Max Unit
150 mW
833
–55 to +150
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F;
LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Base Breakdown Voltage
(IC = 10 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Emitter–Base Breakdown Voltage
(IE = 1.0 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
Typ Max Unit
——
— —v
——
——
— —v
——
——
— —v
——
——
— —v
——
— 15 nA
— 5.0 µA
Rev.O 1/9

LBC847AWT1G
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min
ON CHARACTERISTICS
DC Current Gain
(I C = 2.0 mA, V CE = 5.0 V)
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)
Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)
h FE
V CE(sat)
V BE(sat)
V BE(on)
110
200
420
580
Typ Max Unit
180 220
290 450
520 800
— 0.25
— 0.6
0.7 —
0.9 —
660 700
— 770
V
V
mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
f T 100 — — MHz
Output Capacitance (V CB = 10 V, f = 1.0 MHz)
Cobo — — 4.5 pF
Noise Figure (I C = 0.2 mA,
LBC846A, LBC847A,L BC848A
NF
dB
V CE = 5.0 Vdc, R S = 2.0 k,
LBC846B, LBC847B,L BC848B
— — 10
f = 1.0 kHz, BW = 200 Hz)
LBC847C, LBC848C
— — 4.0
LBC846A, LBC847A, LBC848A
300
150°C
200
25°C
100 55°C
VCE = 1 V
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1
1.0
0.9 IC/IB = 20
55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
0.18
0.16
IC/IB = 20
150°C
0.14
0.12
0.10
25°C
0.08
0.06
55°C
0.04
0.02
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
55°C
0.8 25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
Rev.O 2/9


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors NPN Silicon We declare that the material of product complianc e with RoHS requirements. S- Prefix for Automotive and Other Applications Requ iring Unique Site and Control Change Re quirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION ( Pb– Free ) Device LBC846AWT1G S-LBC846AWT 1G LBC846AWT3G S-LBC846AWT3G Package S C-70 SC-70 Shipping 3000/Tape&Reel 100 00/Tape&Reel MAXIMUM RATINGS LBC846AW T1G,BWT1G LBC847AWT1G,BWT1G CWT1G LBC84 8AWT1G,BWT1G CWT1G S-LBC846AWT1G,BWT1G S-LBC847AWT1G,BWT1G CWT1G S-LBC848AWT1G ,BWT1G CWT1G Rating Symbol Collector –Emitter Voltage V CEO Collector– Base Voltage V CBO Emitter–Base Vol tage V EBO Collector Current — Cont inuous I C BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Uni t V V V mAdc 3 1 2 SOT–323 /SC–70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Thermal Resis tance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA .
Keywords LBC847AWT1G, datasheet, pdf, Leshan Radio Company, General, Purpose, Transistors, BC847AWT1G, C847AWT1G, 847AWT1G, LBC847AWT1, LBC847AWT, LBC847AW, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)