KIA08TB70B RECOVERY DIODE Datasheet

KIA08TB70B Datasheet, PDF, Equivalent


Part Number

KIA08TB70B

Description

FAST RECOVERY DIODE

Manufacture

KIA

Total Page 2 Pages
Datasheet
Download KIA08TB70B Datasheet


KIA08TB70B
KIAULTRAFAST FAST RECOVERY DIODE
8.0A650V
SEMICONDUCTORS
15507595280
QQ 2880195519
1.Description
08TB70B
This series are state−of−the−art devices designed for use in switching power supplies,
inverters and as free wheeling diodes.
2. Features
Ultrafast 25 nanosecond recovery time
175°C operating junction temperature
Popular TO220 package
Epoxy meets UL 94 V0 @ 0.125 in
Low forward voltage
Low leakage current
High temperature glass passivated junction
Reverse voltage to 650 V
Pbfree packages are available
3. Mechanical Characteristics
Case: epoxy, molded
Weight: 1.9 grams (approximately)
Finish: all external surfaces corrosion resistant and terminal
Leads are readily solderable
Lead temperature for soldering purposes: 260°C max for 10 seconds
4. Pin configuration
Pin TO220
1
3
Pin(TO263)
1
2
3
Function
Cathode
Anode
Function
Cathode
Cathode
Anode
1 of 2
Rev 1.1 JAN 2014

KIA08TB70B
KIA
SEMICONDUCTORS
FAST RECOVERY DIODE
8.0A650V
08TB70B
5. Maximum ratings
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current
Total device, (Rated VR), TC = 150°C
Peak repetitive forward current
(Rated VR, square wave, 20 kHz), TC = 150°C
Nonrepetitive peak surge current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
Operating junction temperature and storage
temperature range
Symbol
VRRM
VRW M
VR
IF(AV)
IFM
IFSM
TJ,Tstg
Rating
650
8.0
16
100
-65 to +175
Units
V
A
A
A
ºC
6. Thermal characteristics
Parameter
Maximum thermal resistance, junction−to−case
Symbol
RθJC
Rating
2.0
Unit
ºC/W
7. Electrical characteristics
Parameter
Symbol
Conditions
Maximum Instantaneous Forward Voltage
(Note 1)
VF
IF=8.0 A, TC=25°C
Maximum Instantaneous Reverse Current
(Note 1)
IR
rated DC voltage, TJ=150°C
rated DC voltage, TJ=25°C
Maximum Reverse Recovery Time
trr
IF=1.0 A, di/dt=50 A/μs
IF=0.5 A, IR=1.0 A, IREC=0.25 A
Note:1. Pulse test: pulse width = 300 μs, Duty cycle 2.0%.
Rating
1.8
500
10
30
25
Unit
V
μA
ns
2 of 2
Rev 1.1 JAN 2014


Features KIAULTRAFAST FAST RECOVERY DIODE 8.0A650 V SEMICONDUCTORS 15507595280 QQ 2880195 519 1.Description 08TB70B This series are state−of−the−art devices des igned for use in switching power suppli es, inverters and as free wheeling diod es. 2. Features  Ultrafast 25 nanos econd recovery time  175°C operatin g junction temperature  Popular TO 220 package  Epoxy meets UL 94 V− 0 @ 0.125 in  Low forward voltage Low leakage current  High temperat ure glass passivated junction  Rever se voltage to 650 V  Pb−free packa ges are available 3. Mechanical Charac teristics  Case: epoxy, molded  W eight: 1.9 grams (approximately)  Fi nish: all external surfaces corrosion r esistant and terminal  Leads are rea dily solderable  Lead temperature fo r soldering purposes: 260°C max for 10 seconds 4. Pin configuration Pin ( TO220) 1 3 Pin(TO263) 1 2 3 Function Cathode Anode Function Cathode Cathode Anode 1 of 2 Rev 1.1 JAN 2014 KIA SEMICONDUCTORS FAST RECOVERY DIODE 8.0A650V 08TB70B 5. Maximum ratin.
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