Power MOSFET. IRLL024ZPbF Datasheet


IRLL024ZPbF MOSFET. Datasheet pdf. Equivalent


IRLL024ZPbF


Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

G

PD - 95990A
IRLL024ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 60mΩ S ID = 5.0A
SOT-223

Absolute Maximum Ratings

Parameter

ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C

iContinuous Drain Current, VGS @ 10V (Silicon Limited)
iContinuous Drain Current, VGS @ 10V ™Pulsed Drain Current iPower Dissipation jPower Dissipation iLinear Derating Factor

VGS Gate-to-Source Voltage

dEAS (Thermally limited) Single Pulse Avalanche Energy

EAS (Tested )

hSingle Pulse Avalanche Energy Tested Value

ÙIAR Avalanche Current

gEAR Repetitive Avalanche Energy

TJ Operating Junction and

TSTG

Storage Temperature Range

Thermal Resistance

Parameter
iRθJA Junction-to-Ambient (PCB mount, steady state) jRθJA Junction-to-Ambient (PCB mount, steady state)

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Max. 5.0 4.0 40 2.8 1.0 0.02 ± 16 21 38...



IRLL024ZPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
G
PD - 95990A
IRLL024ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 60m
S ID = 5.0A
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
iContinuous Drain Current, VGS @ 10V (Silicon Limited)
iContinuous Drain Current, VGS @ 10V
™Pulsed Drain Current
iPower Dissipation
jPower Dissipation
iLinear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
iRθJA Junction-to-Ambient (PCB mount, steady state)
jRθJA Junction-to-Ambient (PCB mount, steady state)
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Max.
5.0
4.0
40
2.8
1.0
0.02
± 16
21
38
See Fig.12a, 12b, 15, 16
-55 to + 150
Typ.
–––
–––
Max.
45
120
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/27/10

IRLL024ZPbF
IRLL024ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
55 ––– –––
––– 0.049 –––
––– 48 60
––– ––– 80
––– ––– 100
V
V/°C
m
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 3.0A
eVGS = 5.0V, ID = 3.0A
eVGS = 4.5V, ID = 3.0A
VGS(th)
Gate Threshold Voltage
1.0 ––– 3.0
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
7.5 ––– –––
S VDS = 25V, ID = 3.0A
IDSS
Drain-to-Source Leakage Current
––– ––– 20
µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Qg Total Gate Charge
––– 7.0 11
ID = 3.0A
Qgs Gate-to-Source Charge
––– 1.5 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 4.0 –––
VGS = 5.0V
td(on) Turn-On Delay Time
––– 8.6 –––
VDD = 28V
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
––– 33 –––
––– 20 –––
––– 15 –––
––– 380 –––
ns ID = 3.0A
eRG = 56
VGS = 5.0V
VGS = 0V
Coss Output Capacitance
––– 66 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 36 ––– pF ƒ = 1.0MHz
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 220 –––
––– 53 –––
––– 93 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
––– ––– 5.0
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 40
A showing the
integral reverse
G
––– ––– 1.3
––– 15 23
––– 9.1 14
ep-n junction diode.
S
V TJ = 25°C, IS = 3.0A, VGS = 0V
ens TJ = 25°C, IF = 3.0A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
…Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
max. junction temperature. (See fig. 11).
repetitive avalanche performance.
‚ Limited by TJmax, starting TJ = 25°C, L = 4.8mH
†This value determined from sample failure population.
RG = 25, IAS = 3.0A, VGS =10V.
100% tested to this value in production.
Part not recommended for use above this value.
‡When mounted on 1 inch square copper board.
ƒ Pulse width 1.0ms; duty cycle 2%.
ˆWhen mounted on FR-4 board using minimum
„ Coss eff. is a fixed capacitance that gives the same
recommended footprint.
charging time as Coss while VDS is rising from 0 to 80% VDSS.
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