Power MOSFET. IRF7241PbF Datasheet


IRF7241PbF MOSFET. Datasheet pdf. Equivalent


IRF7241PbF


Power MOSFET
● Trench Technology ● Ultra Low On-Resistance ● P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free

VDSS
-40V

PD - 95294
IRF7241PbF

HEXFET® Power MOSFET

RDS(on) max (mW)
41@VGS = -10V
70@VGS = -4.5V

ID
-6.2A
-5.0A

Description

S1

8

A D

New trench HEXFET® Power MOSFETs from S 2 International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance S 3

7D 6D

per silicon area. This benefit, combined with the ruggedized device design that HEXFET power

G

4

5D

MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use

Top View

in battery and load management applications.

SO-8

Absolute Maximum Ratings

Parameter

VDS
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C

Drain- Source Voltage
Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current 
Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor

VGS TJ, TSTG

Gate-to-Source Voltage Junction and Storage Temperature Range

Thermal Resistance

Symbol
RθJL RθJA
www.irf.com

Parameter Junction-to-Drain Lead Junction-to-Ambient ƒ

Max. -40 -6.2 -4.9 -25 2.5 1.6 20 ± 20 -55 to + 150

Units V
A
W mW/°C
V °C

Typ. ––– –––

Max. 20 50

Units
°C/W
1
10/6/04

IRF7241PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS ∆V(BR)DSS/∆TJ

Parameter Drain-to-Sour...



IRF7241PbF
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Available in Tape & Reel
Lead-Free
VDSS
-40V
PD - 95294
IRF7241PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
41@VGS = -10V
70@VGS = -4.5V
ID
-6.2A
-5.0A
Description
S1
8
A
D
New trench HEXFET® Power MOSFETs from S 2
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance S 3
7D
6D
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
G
4
5D
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
Top View
in battery and load management applications.
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
-40
-6.2
-4.9
-25
2.5
1.6
20
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
10/6/04

IRF7241PbF
IRF7241PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-40
–––
–––
–––
-1.0
8.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.03 –––
25 41
45 70
––– -3.0
––– –––
––– -10
––– -25
––– -100
––– 100
53 80
14 21
3.9 5.9
24 –––
280 –––
210 –––
100 –––
3220 –––
160 –––
190 –––
Units
V
V/°C
m
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -6.2A ‚
VGS = -4.5V, ID = -5.0A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -6.2A
VDS = -32V, VGS = 0V
VDS = -32V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -6.2A
VDS = -32V
VGS = -10V
VDD = -20V ‚
ID = -1.0A
RG = 6.0
VGS = -10V
VGS = 0V
VDS = -25V
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -2.5
––– -25
––– -1.2
32 48
45 68
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board
2 www.irf.com




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