FDD8453LZ_F085 Trench MOSFET Datasheet

FDD8453LZ_F085 Datasheet, PDF, Equivalent


Part Number

FDD8453LZ_F085

Description

N-Channel Power Trench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
Datasheet
Download FDD8453LZ_F085 Datasheet


FDD8453LZ_F085
FDD8453LZ_F085
N-Channel Power Trench® MOSFET
40V, 50A, 6.5mΩ
Aug 2012
Features
„ Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A
„ Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A
„ HBM ESD protection level > 7kv typical
„ RoHS Compliant
„ Qualified to AEC Q101
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
has been especially tailored to minimize the on-state
resistance and switching loss. G-S zener has been added
to enhance ESD voltage level.
Applications
„ Inverter
„ Synchronous Rectifier
Package
D
G
S
D-PAK
(TO-252)
©2012 Fairchild Semiconductor Corporation
FDD8453LZ_F085 Rev. C1
Symbol
D
G
S
1 www.fairchildsemi.com

FDD8453LZ_F085
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package limited)
-Pulsed
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Dreate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
TC = 25°C
(Note 1)
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient, 1in2 copper pad area
Ratings
40
±20
50
Figure4
88
118
0.79
-55 to + 175
1.27
52
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDD8453LZ
Device
FDD8453LZ_F085
Package
D-PAK(TO-252)
Reel Size
13”
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Tape Width
12mm
Quantity
2500 units
Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(5)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
ID = 250μA, VGS = 0V
VDS = 32V,
VGS = 0V
TC = 150oC
VGS = ±20V
40
-
-
-
VGS = VDS, ID = 250μA
ID = 15A, VGS= 10V
ID = 13A, VGS= 4.5V
ID = 15A, VGS= 10V TJ=175oC
VDS = 5V, ID = 15A
1.0
-
-
-
-
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 5V
VDD = 20V
ID = 15A
Ig=1mA
-
-
-
-
-
-
-
-
--
-1
- 250
- ±10
1.8 3.0
5.0 6.5
6.0 7.8
9.4 12.2
91 -
2935
340
260
1.8
60
32
7.5
13
-
-
-
-
78
42
-
-
V
μA
uA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
nC
FDD8453LZ_F085 Rev. C1
2
www.fairchildsemi.com


Features FDD8453LZ_F085 N-Channel Power Trench® MOSFET FDD8453LZ_F085 N-Channel Power Trench® MOSFET 40V, 50A, 6.5mΩ Aug 2 012 Features „ Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A „ Typ rDS(on) = 6m Ω at VGS = 4.5V, ID = 13A „ HBM ESD p rotection level > 7kv typical „ RoHS C ompliant „ Qualified to AEC Q101 Gene ral Description This N-Channel MOSFET i s produced using Fairchild Semiconducto r’s advanced PowerTrench® process th at has been especially tailored to mini mize the on-state resistance and switch ing loss. G-S zener has been added to e nhance ESD voltage level. Applications „ Inverter „ Synchronous Rectifier Package D G S D-PAK (TO-252) ©2012 Fai rchild Semiconductor Corporation FDD845 3LZ_F085 Rev. C1 Symbol D G S 1 www.fa irchildsemi.com FDD8453LZ_F085 N-Chann el Power Trench® MOSFET MOSFET Maximu m Ratings TC = 25°C unless otherwise n oted Symbol Parameter VDSS VGS ID D rain to Source Voltage Gate to Source V oltage Drain Current - Continuous (Package limited) -Pulsed EAS Single Pulse Ava.
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