UPA3753GR EFFECT TRANSISTOR Datasheet

UPA3753GR Datasheet, PDF, Equivalent


Part Number

UPA3753GR

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

Renesas

Total Page 8 Pages
Datasheet
Download UPA3753GR Datasheet


UPA3753GR
μPA3753GR
MOS FIELD EFFECT TRANSISTOR
Data Sheet
R07DS0758EJ0100
Rev.1.00
May 25, 2012
Description
The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application.
Features
Dual chip type
Low on-state resistance
RDS(on) = 56 mMAX. (VGS = 10 V, ID = 2.5 A)
RDS(on) = 72 mMAX. (VGS = 4.5 V, ID = 2.5 A)
Low gate charge
QG = 13.4 nC TYP. (VGS = 10 V)
Small and surface mount package (Power SOP8)
Ordering Information
Part No.
μPA3753GR-E1-AT *1
μPA3753GR-E2-AT *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Note: *1. Pb-Free (This product does not contain Pb in the external electrode and other parts.)
“-E1”,”-E2” indicates the unit orientation.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) *1
Total Power Dissipation (1unit) *2
Total Power Dissipation (2units) *2
Channel Temperature
Storage Temperature
Single Avalanche Current *3
Single Avalanche Energy *3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
TSTG
IAS
EAS
Ratings
60
±20
±5.0
±20
0.85
1.12
150
55 to +150
5.0
2.5
Notes: *1. PW 10 μs, Duty Cycle 1%
*2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
*3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
Unit
V
V
A
A
W
W
°C
°C
A
mJ
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Page 1 of 6

UPA3753GR
μPA3753GR
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance *1
Drain to Source On-state
Resistance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage *1
Reverse Recovery Time
Reverse Recovery Charge
Note: *1. Pulsed
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
1.5
2.5
TYP.
44
49
640
72
32
8.5
3.7
30
5.1
13.4
1.6
3.1
22
36
MAX.
1.0
±100
2.5
56
72
1.2
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VGS = 4.5V, ID = 2.5 A
VDS = 10 V,
VGS = 0 V,
f = 1.0 MHz
ID = 2.5 A, VDD = 30 V,
VGS = 10 V,
RG = 10 Ω
VGS = 10 V, ID = 5 A ,
VDD = 48 V
IF = 5.0 A, VGS = 0 V
IF = 5.0 A, VGS = 0 V,
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS
90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Page 2 of 6


Features μPA3753GR MOS FIELD EFFECT TRANSISTOR Data Sheet R07DS0758EJ0100 Rev.1.00 May 25, 2012 Description The μPA3753GR i s Dual N-channel MOS Field Effect Trans istors designed for switching applicati on. Features • Dual chip type • Low on-state resistance ⎯ RDS(on) = 56 m Ω MAX. (VGS = 10 V, ID = 2.5 A) ⎯ R DS(on) = 72 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) • Low gate charge ⎯ QG = 1 3.4 nC TYP. (VGS = 10 V) • Small and surface mount package (Power SOP8) Ord ering Information Part No. μPA3753GR- E1-AT *1 μPA3753GR-E2-AT *1 Lead Plat ing Pure Sn (Tin) Packing Tape 2500 p/ reel Package Power SOP8 0.08 g TYP. N ote: *1. Pb-Free (This product does not contain Pb in the external electrode a nd other parts.) “-E1”,”-E2” in dicates the unit orientation. Absolute Maximum Ratings (TA = 25°C) Item Dra in to Source Voltage (VGS = 0 V) Gate t o Source Voltage (VDS = 0 V) Drain Curr ent (DC) Drain Current (pulse) *1 Total Power Dissipation (1unit) *2 Total Power Dissipation (2units) *2 Channel Temperature Storage .
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