LBC817-25WT3G Purpose Transistors Datasheet

LBC817-25WT3G Datasheet, PDF, Equivalent


Part Number

LBC817-25WT3G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 5 Pages
Datasheet
Download LBC817-25WT3G Datasheet


LBC817-25WT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURES
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC817-25WT1G
LBC817-25WT3G
Marking
6B
6B
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS(Ta = 25)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Limits
45
50
5.0
500
LBC817-25WT1G
S-LBC817-25WT1G
3
Unit
Vdc
Vdc
Vdc
mAdc
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Parameter
Symbol
Total Power Dissipation FR-5
PD
Board,(Note 1.)@Ta = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
RθJA
Total Power Dissipation Alumina PD
Substrate,(Note 2.)@Ta = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Limits
150
1.2
833
200
1.6
625
–55 to +150
Unit
mW
°C/W
°C/W
mW
°C/W
°C/W
°C
July , 2015
Rev .A 1/5

LBC817-25WT3G
LESHAN RADIO COMPANY, LTD.
LBC817-25WT1G,S-LBC817-25WT1G
ELECTRICAL CHARACTERISTICS (Ta= 25)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(IC = 10 μAdc,VEB = 0)
Emitter–Base Breakdown Voltage
(I E = 1 μAdc, I C = 0)
Collector Cutoff Current
(V CB = 20 Vdc)
(V CB = 20 Vdc, TA = 150°C)
DC Current Gain
(I C = 100 mAdc, V CE = 1 Vdc)
Collector–Emitter Saturation Voltage
(I C = 500mAdc, I B = 50 mAdc)
Base–Emitter On Voltage
(I C = 500mAdc, V CE = 1 mAdc)
Current–Gain — Bandwidth Product
(I C = 10mAdc, V CE= 5Vdc, f = 100MHz)
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Symbol
VBR(CEO)
VBR(CES)
VBR(EBO)
ICBO
hFE
VCE(sat)
VBE(on)
fT
Cob
Min.
45
50
5
160
100
Typ.
10
Max.
100
5
400
0.7
1.2
Unit
V
V
V
nA
μA
V
V
MHz
pF
July , 2015
Rev .A 2/5


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors NPN Silicon ●FEATURE S 1) We declare that the material of pr oduct compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Auto motive and Other Applications Requiring Unique Site and Control Change Require ments; AEC-Q101 Qualified and PPAP Capa ble. ●DEVICE MARKING AND ORDERING IN FORMATION Device LBC817-25WT1G LBC817- 25WT3G Marking 6B 6B Shipping 3000/Ta pe&Reel 10000/Tape&Reel ●MAXIMUM RAT INGS(Ta = 25℃) Parameter Collector– Emitter Voltage Collector–Base Voltag e Emitter–Base Voltage Collector Curr ent — Continuous Symbol VCEO VCBO VE BO IC Limits 45 50 5.0 500 LBC817-25W T1G S-LBC817-25WT1G 3 Unit Vdc Vdc Vd c mAdc 1 2 SC-70 1 BASE 3 COLLECTOR 2 EMITTER ●THERMAL CHARACTERISTICS Parameter Symbol Total Power Dissipa tion FR-5 PD Board,(Note 1.)@Ta = 25 C Derate above 25°C Thermal Resistan ce – Junction-to-Ambient RθJA Tota l Power Dissipation Alumina PD Substrate,(Note 2.)@Ta = 25°C Derate above 25°C Therm.
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