LMBTA06WT1G Driver Transistors Datasheet

LMBTA06WT1G Datasheet, PDF, Equivalent


Part Number

LMBTA06WT1G

Description

Driver Transistors

Manufacture

Leshan Radio Company

Total Page 3 Pages
Datasheet
Download LMBTA06WT1G Datasheet


LMBTA06WT1G
LESHAN RADIO COMPANY, LTD.
Driver Transistors
FEATURES
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LMBTA05WT1G
LMBTA06WT1G
S-LMBTA05WT1G
S-LMBTA06WT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
LMBTA05 LMBTA06
60 80
60 80
4.0
500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
150 mW
1.2 mW/°C
833 °C/W
200 mW
1.6 mW/°C
625
–55 to +150
°C/W
°C
DEVICE MARKING
(S-)LMBTA05WT1G = 1H, (S-)LMBTA06WT1G = 1GM;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 1.0 mAdc, I B = 0)
LMBTA05
LMBTA06
Emitter–Base Breakdown Voltage
(I E = 100 µAdc, I C = 0)
Collector Cutoff Current
( V CE = 60Vdc, I B = 0)
Emitter Cutoff Current
( V CB = 60Vdc, I E = 0)
( V CB = 80Vdc, I E = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
LMBTA05
LMBTA06
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
V (BR)CEO
V (BR)EBO
I CES
I CBO
Min
60
80
4.0
Max
0.1
0.1
0.1
3
1
2
SOT–323 / SC – 70
1
BASE
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
µAdc
µAdc
Rev.O 1/3

LMBTA06WT1G
LESHAN RADIO COMPANY, LTD.
LMBTA05WT1G LMBTA06WT1G
S-LMBTA05WT1G S-LMBTA06WT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 100 mAdc, V CE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 100 mAdc, I B = 10 mAdc)
Base–Emitter On Voltage
(I C = 100 mAdc, V CE= 1.0 Vdc)
hFE
VCE(sat)
V BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current –Gain – Bandwidth Product(4)
(V CE = 2.0 V, I C = 10mA, f = 100 MHz)
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
fT
ORDERING INFORMATION
Device
(S-)LMBTA05WT1G
(S-)LMBTA06WT1G
(S-)LMBTA05WT3G
(S-)LMBTA06WT3G
Marking
1H
1GM
1H
1GM
Shipping
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
Min
100
100
100
Max Unit
––
Vdc
0.25
Vdc
1.2
— MHz
Rev.O 2/3


Features LESHAN RADIO COMPANY, LTD. Driver Trans istors FEATURES • We declare that the material of product compliance with Ro HS requirements. • S- Prefix for Auto motive and Other Applications Requiring Unique Site and Control Change Require ments; AEC-Q101 Qualified and PPAP Capa ble. LMBTA05WT1G LMBTA06WT1G S-LMBTA05 WT1G S-LMBTA06WT1G MAXIMUM RATINGS Ra ting Symbol Collector–Emitter Volta ge V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Col lector Current — Continuous I C Valu e LMBTA05 LMBTA06 60 80 60 80 4.0 500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTE RISTICS Characteristic Total Device Dis sipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissip ation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Stora ge Temperature Symbol PD R θJA PD R JA T J , T stg Max Unit 150 mW 1.2 m W/°C 833 °C/W 200 mW 1.6 mW/°C 625 –55 to +150 °C/W °C DEVICE MARKING (S-)LMBT.
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