UFH Transistor. LMBT918LT1G Datasheet


LMBT918LT1G Transistor. Datasheet pdf. Equivalent


Part Number

LMBT918LT1G

Description

VHF / UFH Transistor

Manufacture

Leshan Radio Company

Total Page 3 Pages
Datasheet
Download LMBT918LT1G Datasheet


LMBT918LT1G
VHF / UFH Transistor
NPN Silicon
LESHAN RADIO COMPANY, LTD.
z We declare that the material of product compliance with RoHS requirements.
Ordering Information
LMBT918LT1G
S-LMBT918LT1G
Device
LMBT918LT1G
S-LMBT918LT1G
LMBT918LT3G
S-LMBT918LT3G
Marking
M3B
M3B
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V CBO
V EBO
IC
Value
15
30
3.0
50
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max Unit
PD 225 mW
RθJA
PD
RθJA
TJ , Tstg
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT9181LT1G = M3B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 3.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = 1.0 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 15 Vdc, I E = 0)
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
15
30
3.0
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max Unit
— Vdc
— Vdc
— Vdc
50 nAdc
Rev.O 1/3

LMBT918LT1G
LESHAN RADIO COMPANY, LTD.
LMBT918LT1G , S-LMBT918LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(I C = 3.0 mAdc, V CE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
hFE
VCE(sat)
V BE(sat)
Min
20
––
Max
––
0.4
1.0
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz)
Output Capacitance
(V CB = 0 Vdc, I E = 0, f = 1.0 MHz)
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure
(I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 , f = 60 MHz) (Figure 1)
Power Output
(I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz)
Common–Emitter Amplifier Power Gain
(I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz)
V BB
EXTERNAL
100 k
fT
C obo
C ibo
NF
P out
G pe
V CC
600 —
— 3.0
— 1.7
— 2.0
— 6.0
30 —
11 —
1000 pF BYPASS
Unit
––
Vdc
Vdc
MHz
pF
pF
dB
mW
dB
0.018 µF
0.018 µF
C
3G
0.018 µF
50
0.018 µF
NF TEST CONDITIONS
I C = 1.0 mA
V CE = 6.0 VOLTS
R S = 50
f = 60 MHz
G pe TEST CONDITIONS
I C = 6.0 mA
V CE = 12 VOLTS
f = 200 MHz
Figure 1. NF, G pe Measurement Circuit 20–200
RF
VM
Rev.O 2/3


Features VHF / UFH Transistor NPN Silicon LESHAN RADIO COMPANY, LTD. z We declare that the material of product compliance wit h RoHS requirements. Ordering Informati on LMBT918LT1G S-LMBT918LT1G Device L MBT918LT1G S-LMBT918LT1G LMBT918LT3G S- LMBT918LT3G Marking M3B M3B Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Collector–E mitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Curre nt — Continuous V CEO V CBO V EBO IC Value 15 30 3.0 50 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Character istic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25° C Thermal Resistance, Junction to Ambie nt Total Device Dissipation Alumina Sub strate, (2) TA = 25°C Derate above 25 C Thermal Resistance, Junction to Ambi ent Junction and Storage Temperature S ymbol Max Unit PD 225 mW RθJA PD R JA TJ , Tstg 556 °C/W 300 mW 2.4 mW /°C 417 –55 to +150 °C/W °C 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARK.
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