L2SA812QLT3G Purpose Transistors Datasheet

L2SA812QLT3G Datasheet, PDF, Equivalent


Part Number

L2SA812QLT3G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 5 Pages
Datasheet
Download L2SA812QLT3G Datasheet


L2SA812QLT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L2SA812QLT1G Series
FEATURE
ƽHigh Voltage: VCEO = -50 V.
ƽEpitaxial planar type.
S-L2SA812QLT1G Series
ƽNPN complement: L2SC1623
ƽWe declare that the material of product compliance with RoHS requirements.
3
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
DEVICE MARKING AND ORDERING INFORMATION
2
Device
Marking
L2SA812QLT1G
S-L2SA812QLT1G
M8
L2SA812QLT3G
S-L2SA812QLT3G
L2SA812RLT1G
S-L2SA812RLT1G
L2SA812RLT3G
S-L2SA812RLT3G
L2SA812SLT1G
S-L2SA812SLT1G
L2SA812SLT3G
S-L2SA812SLT3G
M8
M6
M6
M7
M7
MAXIMUM RATINGS
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
SOT-23
1
BASE
3
COLLECTOR
2
EMITTER
Rating
Collector-Emitter Voltage
Symbol
VCEO
L2SA812
-50
Unit
V
Collector-Base Voltage
Emitter-Base Voltage
VCBO -60 V
VEBO -6 V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-150
mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
Tj ,Tstg
Max
200
1.8
556
200
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
Rev.O 1/5

L2SA812QLT3G
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series
S-L2SA812QLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1mA)
Emitter-Base Breakdown Voltage
(IE=-50 µΑ )
Collector-Base Breakdown Voltage
(IC=-50 µA)
Collector Cutoff Current
(VCB=-50V)
Emitter Cutoff Current (VBE=-6V)
V(BR)CEO
V(BR)EBO
V(BR)CBO
-50
-6
-60
ICBO
IEBO
-
--
--
--
- -0.1
-0.1
ON CHARACTERISTICS
DC Current Gain
(IC=-1mA,VCE=-6.0V)
Collector-Emitter Saturation Voltage
(IC=-100mA,IB=-10mA)
Base -Emitter On Voltage
IE=-1.0mA,VCE=-6.0V)
hFE
VCE(sat)
VBE
120
-
-0.58
-
-0.18
-0.62
560
-0.3
-0.68
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(VCE=-6.0V,IE =-10mA)
Ft - 180
Output Capacitance(VCE = -10V, IE=0, f=1.0MHz) Cobo
-
4.5
-
-
hFE Values are classified as followes
NOTE:
*
h
FE
Q
120~270
R
180~390
S
270~560
Unit
V
V
V
µA
µA
V
V
MHz
pF
Rev.O 2/5


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors L2SA812QLT1G Series F EATURE ƽHigh Voltage: VCEO = -50 V. ƽ Epitaxial planar type. S-L2SA812QLT1G Series ƽNPN complement: L2SC1623 ƽWe declare that the material of product c ompliance with RoHS requirements. 3 S- Prefix for Automotive and Other App lications Requiring Unique Site and Con trol Change Requirements; AEC-Q101 Qual ified and PPAP Capable. 1 DEVICE MARK ING AND ORDERING INFORMATION 2 Device Marking L2SA812QLT1G S-L2SA812QLT1G M8 L2SA812QLT3G S-L2SA812QLT3G L2SA81 2RLT1G S-L2SA812RLT1G L2SA812RLT3G S-L2 SA812RLT3G L2SA812SLT1G S-L2SA812SLT1G L2SA812SLT3G S-L2SA812SLT3G M8 M6 M6 M 7 M7 MAXIMUM RATINGS Shipping 3000/Ta pe&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Ta pe&Reel SOT-23 1 BASE 3 COLLECTOR 2 EMITTER Rating Collector-Emitter Volta ge Symbol VCEO L2SA812 -50 Unit V C ollector-Base Voltage Emitter-Base Volt age VCBO -60 V VEBO -6 V Collector current-continuoun IC THERMAL.
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