Power Transistor. B989 Datasheet


B989 Transistor. Datasheet pdf. Equivalent


Part Number

B989

Description

Silicon PNP Power Transistor

Manufacture

INCHANGE

Total Page 2 Pages
Datasheet
Download B989 Datasheet


B989
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SB989
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Collector Power Dissipation-
: PC= 30W@ TC= 25
·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A)
·Complement to Type 2SD1352
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
-0.4 A
30 W
150
-55~150
isc websitewww.iscsemi.cn
1

B989
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SB989
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -5V
ICBO Collector Cutoff Current
VCB= -80V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
COB Output Capacitance
fT Current-Gain—Bandwidth Product
IE= 0; VCB= -10V; ftest= 1MHz
IC= -0.5A; VCE= -5V
MIN TYP. MAX UNIT
-80 V
-1.7 V
-1.5 V
-30 μA
-100 μA
40 240
15
90 pF
8 MHz
hFE-1 Classifications
ROY
40-80 70-140 120-240
isc websitewww.iscsemi.cn
2


Features INCHANGE Semiconductor isc Silicon PNP P ower Transistor Product Specification 2SB989 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Mi n) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturat ion Voltage- : VCE(sat)= -1.7V(Max)@ (I C= -3A, IB= -0.3A) ·Complement to Type 2SD1352 APPLICATIONS ·Designed for g eneral purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA METER VALUE UNIT VCBO Collector-Bas e Voltage -80 V VCEO Collector-Emitt er Voltage -80 V VEBO Emitter-Base V oltage -5 V IC Collector Current-Cont inuous -4 A IB Base Current-Continuou s PC Collector Power Dissipation @TC= 25℃ TJ Junction Temperature Tstg St orage Temperature -0.4 A 30 W 150 ℃ -55~150 ℃ isc website:www.iscsemi. cn 1 INCHANGE Semiconductor isc Silic on PNP Power Transistor Product Specif ication 2SB989 ELECTRICAL CHARACTERIST ICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= .
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