PH5030AL level FET Datasheet

PH5030AL Datasheet, PDF, Equivalent


Part Number

PH5030AL

Description

N-channel TrenchMOS logic level FET

Manufacture

NXP

Total Page 14 Pages
Datasheet
Download PH5030AL Datasheet


PH5030AL
PH5030AL
N-channel TrenchMOS logic level FET
Rev. 03 — 12 January 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing and consumer applications.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ Consumer applications
„ Desktop Voltage Regulator Module
(VRM)
„ Notebook Voltage Regulator Module
(VRM)
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14
and 15
QG(tot) total gate charge
Static characteristics
VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14
RDSon
drain-source
VGS = 10 V; ID = 15 A;
on-state resistance Tj = 25 °C
Min Typ Max Unit
- - 30 V
- - 91 A
- - 61 W
- 3.8 - nC
- 14.1 - nC
-
3.63 5
m

PH5030AL
NXP Semiconductors
PH5030AL
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1S
source
2S
source
3S
source
4G
gate
mb D
mounting base; connected to
drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PH5030AL
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
4. Limiting values
Version
SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 84 A; Vsup 30 V;
drain-source avalanche RGS = 50 ; unclamped
energy
Min Max Unit
- 30 V
- 30 V
-20 20
V
- 64 A
- 91 A
- 336 A
- 61 W
-55 175 °C
-55 175 °C
- 84 A
- 336 A
- 32 mJ
PH5030AL_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 12 January 2010
© NXP B.V. 2010. All rights reserved.
2 of 14


Features PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Produ ct data sheet 1. Product profile 1.1 General description Logic level N-chann el enhancement mode Field-Effect Transi stor (FET) in a plastic package using T renchMOS technology. This product is de signed and qualified for use in computi ng and consumer applications. 1.2 Feat ures and benefits „ High efficiency du e to low switching and conduction losse s „ Suitable for logic level gate dri ve sources 1.3 Applications „ Consume r applications „ Desktop Voltage Regul ator Module (VRM) „ Notebook Voltage Regulator Module (VRM) 1.4 Quick refer ence data Table 1. Quick reference Sy mbol Parameter Conditions VDS drain-s ource voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; V GS = 10 V; see Figure 1 Ptot total pow er dissipation Tmb = 25 °C; see Figur e 2 Dynamic characteristics QGD gate -drain charge VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14 and 15 QG(tot) total gate charge Static characteris.
Keywords PH5030AL, datasheet, pdf, NXP, N-channel, TrenchMOS, logic, level, FET, H5030AL, 5030AL, 030AL, PH5030A, PH5030, PH503, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)