AUIRLR024Z Power MOSFET Datasheet

AUIRLR024Z Datasheet, PDF, Equivalent


Part Number

AUIRLR024Z

Description

Power MOSFET

Manufacture

International Rectifier

Total Page 14 Pages
Datasheet
Download AUIRLR024Z Datasheet


AUIRLR024Z
AUTOMOTIVE GRADE
PD - 97753
AUIRLR024Z
AUIRLU024Z
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ.
max.
S ID
55V
46m
58m
16A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
D
S
G
D-Pak
AUIRLRU024Z
S
D
I-Pak G
AUIRLU024Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
jRJC
Junction-to-Case
iRJA Junction-to-Ambient (PCB mount)
RJA Junction-to-Ambient
16
11
64
35
0.23
± 16
25
25
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Typ.
–––
–––
–––
Max.
4.28
40
110
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/16/12

AUIRLR024Z
AUIRLR/U024Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
55 ––– –––
––– 0.053 –––
––– 46 58
––– ––– 80
––– ––– 100
1.0 ––– 3.0
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 9.6A
emVGS = 5.0V, ID = 5.0A
eVGS = 4.5V, ID = 3.0A
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
7.4 ––– ––– S VDS = 25V, ID = 9.6A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 6.6 9.9
ID = 5.0A
Qgs Gate-to-Source Charge
––– 1.6 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 3.9 –––
VGS = 5.0V
td(on) Turn-On Delay Time
––– 8.2 –––
VDD = 28V
tr Rise Time
––– 43 –––
ID = 5.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 19 ––– ns RG = 28
––– 16 –––
VGS = 5.0V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
––– 380 –––
––– 62 –––
––– 39 –––
––– 180 –––
––– 50 –––
––– 81 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 16
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 64
A showing the
integral reverse
G
––– ––– 1.3
ep-n junction diode.
S
V TJ = 25°C, IS = 9.6A, VGS = 0V
e––– 16 24 ns TJ = 25°C, IF = 9.6A, VDD = 28V
––– 11 17 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11).
avalanche performance.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.54mH † This value determined from sample failure population,
RG = 25, IAS = 9.6A, VGS =10V. Part not
starting TJ = 25°C, L = 0.54mH, RG = 25, IAS = 9.6A,
recommended for use above this value.
VGS =10V.
ƒ Pulse width 1.0ms; duty cycle 2%.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .
„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS .
ˆ
For recommended footprint and soldering techniques refer
to application note #AN-994.
Ris measured at TJ of approximately 90°C.
2 www.irf.com


Features AUTOMOTIVE GRADE PD - 97753 AUIRLR024Z AUIRLU024Z Features ● Logic Level Advanced Process Technology ● Ultr a Low On-Resistance ● 175°C Operatin g Temperature ● Fast Switching ● Re petitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Autom otive Qualified * G HEXFET® Power MO SFET D V(BR)DSS RDS(on) typ. max. S ID 55V 46m 58m 16A Description Sp ecifically designed for Automotive appl ications, this HEXFET® Power MOSFET ut ilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features o f this design are a 175°C junction ope rating temperature, fast switching spee d and improved repetitive avalanche rat ing . These features combine to make th is design an extremely efficient and re liable device for use in Automotive app lications and a wide variety of other a pplications. D S G D-Pak AUIRLRU024Z S D I-Pak G AUIRLU024Z G Gate D Drai n S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maxi.
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