FQD12N20LTM_F085 N-Channel MOSFET Datasheet

FQD12N20LTM_F085 Datasheet, PDF, Equivalent


Part Number

FQD12N20LTM_F085

Description

200V Logic Level N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
Datasheet
Download FQD12N20LTM_F085 Datasheet


FQD12N20LTM_F085
June 2010
FQD12N20LTM_F085
200V Logic Level N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
• 9.0A, 200V, RDS(on) = 0.28@VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
Qualified to AEC Q101
RoHS Compliant
D
GS
D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
IAR
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Avalanche Current
(Note 1)
(Note 1)
dv/dt
PD
TJ, TSTG
TL
Peak Diode Recovery dv/dt
(Note 2)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

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FQD12N20LTM_F085
200
9.0
5.7
36
± 20
9.0
5.5
2.5
55
0.44
-55 to +150
300
Units
V
A
A
A
V
A
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQD12N20LTM_F085 Rev. B
1
Typ Max Units
-- 2.27 °C/W
-- 50 °C/W
-- 110 °C/W
www.fairchildsemi.com

FQD12N20LTM_F085
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
200 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.14
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
-- --
-- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.0
VGS = 10 V, ID = 4.5 A
VGS = 5 V, ID = 4.5 A
--
0.22 0.28
0.25 0.32
VDS = 30 V, ID = 4.5 A (Note 3) -- 11.6
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 830 1080 pF
-- 120 155
pF
-- 17 22 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 11.6 A,
RG = 25
-- 15
40
-- 190 390
-- 60 130
(Note 3, 4)
--
120
250
VDS = 160 V, ID = 11.6 A,
VGS = 5 V
(Note 3, 4)
--
--
--
16
2.8
7.6
21
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 9.0
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- --
36
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.0 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 11.6 A,
-- 128
dIF / dt = 100 A/µs
(Note 3) -- 0.56
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. ISD 11.6A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
3. Pulse Test : Pulse width 300µs, Duty cycle 2%
4. Essentially independent of operating temperature
A
A
V
ns
µC
FQD12N20LTM_F085 Rev. B
2 www.fairchildsemi.com


Features FQD12N20LTM_F085 200V Logic Level N-Chan nel MOSFET June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET Gen eral Description These N-Channel enhanc ement mode power field effect transisto rs are produced using Fairchild’s pro prietary, planar stripe, DMOS technolog y. This advanced technology has been es pecially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC conver ters, switch mode power supply, motor c ontrol. Features • 9.0A, 200V, RDS(o n) = 0.28Ω @VGS = 10 V • Low gate c harge ( typical 16 nC) • Low Crss ( t ypical 17 pF) • Fast switching • 10 0% avalanche tested • Improved dv/dt capability • Low level gate drive req uirement allowing direct opration from logic drivers • Qualified to AEC Q101 • RoHS Compliant D GS D-PAK Abso lute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS IAR P.
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