Enhancement-Mode MOSFET. GT3401 Datasheet


GT3401 MOSFET. Datasheet pdf. Equivalent


GT3401


30V P-Channel Enhancement-Mode MOSFET
YGMOS Technology Crop.
30V P-Channel Enhancement-Mode MOSFET

30V P  MOS 

GT3401
Data Sheet

VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A = 60mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 75mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 120mΩ

Features 

Advanced trench process technology



High Density Cell Design For Ultra Low On-Resistance Package Dimensions 



Marking D

D

A16T

3401

SOT-23(PACKAGE)

GS

GS

REF.
A B C D E
F

Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50
0 0.10
0.45 0.55

REF.
G H K J L
M

Millimeter

Min.
1.90 1.00 0.10 0.40 0.85

Max.
REF. 1.30 0.20 1.15

0° 10°

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC 

Parameter 

Symbol 

Limit 

Unit 

Drain-Source Voltage  Gate-Source Voltage 

VDS -30 V
VGS ±12

Continuous Drain Current 

Pulsed Drain Current



Maximum Power Dissipation 

TA = 25oC TA = 75oC

Operating Junction and Storage Temperature Range 

Junction-to-Ambient Thermal Resistance (PCB mounted) 

ID IDM
PD
TJ, Tstg RθJA

-4.2 -30 1.4 1 -55 to 150 125

A
W oC oC/W

-1-

GT3401

YGMOS Technology Crop.

Data Sheet

ELECTRICAL CHARACTERISTICS 

Parameter 



Test Condition 

  



Static 

Drain-Source Breakdown Voltage  BVDSS

Drain-Source On-State Resistance  RDS(on)

Drain-Source On-State Resistance  RDS(on)

Drain-Source On-State Resistance  RDS(on)

Gate Threshold Voltage 

VGS(th)

Zero Gate Voltage Drain Curre...



GT3401
YGMOS Technology Crop.
30V P-Channel Enhancement-Mode MOSFET
30V P 沟道增强型 MOS
GT3401
Data Sheet
VDS= -30V
RDS(ON), Vgs@-10V, Ids@-4.2A = 60m
RDS(ON), Vgs@-4.5V, Ids@-4.0A = 75m
RDS(ON), Vgs@-2.5V, Ids@-1.0A = 120m
Features 特性
Advanced trench process technology
高级的加工技术
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions 封装尺寸及外形图
极低的导通电阻高密度的单元设计
Marking
D
D
A16T
3401
SOT-23(PACKAGE)
GS
GS
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
1.90
1.00
0.10
0.40
0.85
Max.
REF.
1.30
0.20
-
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC 极限参数和热特性
Parameter 极限参数
Symbol 符号
Limit 范围
Unit 单位
Drain-Source Voltage 漏源电压
Gate-Source Voltage 栅源电压
VDS -30
V
VGS ±12
Continuous Drain Current 连续漏极电流
Pulsed Drain Current
脉冲漏极电流
Maximum Power Dissipation 最大耗散功率
TA = 25oC
TA = 75oC
Operating Junction and Storage Temperature Range 使用及储存温度
Junction-to-Ambient Thermal Resistance (PCB mounted) 结环热阻
ID
IDM
PD
TJ, Tstg
RθJA
-4.2
-30
1.4
1
-55 to 150
125
A
W
oC
oC/W
-1-

GT3401
GT3401
YGMOS Technology Crop.
Data Sheet
ELECTRICAL CHARACTERISTICS 一般电气特性
Parameter 参数
符号
Test Condition 测试条件
最小值 典型值 最大值
单位
Static 静态参数
Drain-Source Breakdown Voltage 漏源击穿电压 BVDSS
Drain-Source On-State Resistance 漏源导通电阻 RDS(on)
Drain-Source On-State Resistance 漏源导通电阻 RDS(on)
Drain-Source On-State Resistance 漏源导通电阻 RDS(on)
Gate Threshold Voltage 开启电压
VGS(th)
Zero Gate Voltage Drain Current 零栅压漏极电流 IDSS
Gate Body Leakage 漏极短路时截止栅电流
IGSS
Forward Transconductance 正向跨导
gfs
Dynamic 动态参数
VGS = 0V, ID = -250uA
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -4A
VGS = -2.5V, ID =-1A
VDS =VGS, ID = -250uA
VDS = -24V, VGS = 0V
VGS = ± 12V, VDS = 0V
VDS = -5V, ID = -5A
-30 V
53.0 60.0
64.0 75.0 m
86.0 120.0
-0.7 -1 -1.3 V
-1 uA
± 100 nA
7 11
S
Total Gate Charge 栅极总电荷
Gate-Source Charge -源极电荷
Gate-Drain Charge -漏极电荷
Turn-On Delay Time 导通延迟时间
Turn-On Rise Time 导通上升时间
Turn-Off Delay Time 关断延迟时间
Turn-Off Fall Time 关断下降时间
Input Capacitance 输入电容
Output Capacitance 输出电容
Reverse Transfer Capacitance 反向传输电容
Source-Drain Diode 源漏二极管参数
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS =-20 V, ID = -5 .7A
VGS = -10 V
VDD= -20V, RL=20
ID = -1 A, VGEN = -10V
RG = 6
VDS = 8V, VGS = 0V
f = 1.0 MHz
9.4
2 nC
3
6.3
3.2
ns
38.2
12
954
115 pF
77
Max. Diode Forward Current 最大正向电流
IS
-2.2 A
Diode Forward Voltage 正向电压
VSD IS = 1.8A, VGS = 0V
-1.0 V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2% 注意:脉冲测试:脉冲<= 300us 死区<= 2%
-2-




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