YGMOS Technology Crop.
30V P-Channel Enhancement-Mode MOSFET
30V P MOS
GT3401
Data Sheet
VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A = 60mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 75mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 120mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance Package Dimensions
Marking D
D
A16T
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