DMG6601LVT MODE MOSFET Datasheet

DMG6601LVT Datasheet, PDF, Equivalent


Part Number

DMG6601LVT

Description

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Manufacture

Diodes

Total Page 9 Pages
Datasheet
Download DMG6601LVT Datasheet


DMG6601LVT
DMG6601LVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
RDS(ON) max
Package
Q1 30V 55m@ VGS = 10V TSOT26
65m@ VGS = 4.5V TSOT26
Q2 -30V 110m@ VGS = -10V TSOT26
142m@ VGS = -4.5V TSOT26
ID max
TA = +25°C
3.8A
3.6A
-2.5A
-2.1A
Features
Complementary MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
TSOT26
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.008 grams (approximate)
D1
Q1
D2
Q2
G1 1
6 D1
S2 2
G2 3
5 S1
4 D2
G1
G2
Top View
Top View
S1
N-Channel
S2
P-Channel
Device Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMG6601LVT-7
Case
TSOT26
Packaging
3K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
66G
66G = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 9
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
August 2013
© Diodes Incorporated

DMG6601LVT
Maximum Ratings - Q1 and Q2 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Q1
30
±12
3.8
3.0
4.5
3.4
1.5
20
DMG6601LVT
Q2 Units
-30 V
±12 V
-2.5
-2
A
-3
-2.3
A
-1.5 A
-15 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
0.85
0.54
147
103
1.3
0.83
96
67
36
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics - Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
30
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
-1
- ±100
1
34
38
49
6
0.75
1.5
55
65
85
-
1.0
422 -
41 -
39 -
1.26 -
5.4 -
12.3 -
0.8 -
1.2 -
1.6 -
7.4 -
31.2 -
15.6 -
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.4A
mVGS = 4.5V, ID = 3A
VGS = 2.5V, ID = 2A
S VDS = 5V, ID = 3.4A
V VGS = 0V, IS = 1A
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = 10V, VDS = 15V,
nC ID = 3.1A
nC
ns
ns VDS = 15V, VGS = 10V,
ns RL = 4.7, RG =3,
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
2 of 9
www.diodes.com
August 2013
© Diodes Incorporated


Features ADVANCE INFORMTION DMG6601LVT COMPLEMEN TARY PAIR ENHANCEMENT MODE MOSFET Prod uct Summary Device V(BR)DSS RDS(ON) m ax Package Q1 30V 55mΩ @ VGS = 10V TSOT26 65mΩ @ VGS = 4.5V TSOT26 Q2 -3 0V 110mΩ @ VGS = -10V TSOT26 142mΩ @ VGS = -4.5V TSOT26 ID max TA = +25° C 3.8A 3.6A -2.5A -2.1A Features  C omplementary MOSFET  Low On-Resistan ce  Low Input Capacitance  Fast S witching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q1 01 Standards for High Reliability Desc ription This MOSFET has been designed t o minimize the on-state resistance (RDS (ON)) and yet maintain superior switchi ng performance, making it ideal for hig h efficiency power management applicati ons. Applications  Backlighting  Power Management Functions  DC-DC Co nverters TSOT26 Mechanical Data  Ca se: TSOT26  Case Material: Molded Pl astic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity:.
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