RJK5002DJE MOS FET Datasheet

RJK5002DJE Datasheet, PDF, Equivalent


Part Number

RJK5002DJE

Description

High Speed Power Switching MOS FET

Manufacture

Renesas Technology

Total Page 4 Pages
Datasheet
Download RJK5002DJE Datasheet


RJK5002DJE
RJK5002DJE
500V - 2.4A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)
High speed switching
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
VDSS
VGSS
ID Note1
ID(pulse) Note3
IDR Note1
IDR(pulse) Note3
Pch Note 2
Channel to ambient thermal Impedance
ch-a
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited by Tch max.
2. Value at Tc = 25C
3. Pulse width limited by safe operating area.
Preliminary Datasheet
R07DS0844EJ0100
Rev.1.00
Jul 05, 2012
D
1. Source
2. Drain
3. Gate
S
Value
500
30
2.4
4.8
2.4
4.8
0.9
139
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
W
C/W
C
C
R07DS0844EJ0100 Rev.1.00
Jul 05, 2012
Page 1 of 3

RJK5002DJE
RJK5002DJE
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Symbol
Min
Typ Max Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
500
— V ID = 10 mA, VGS = 0
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
IDSS
IGSS
VGS(off)
RDS(on)
3.0
3.83
1
0.1
4.5
5.00
A VDS = 500 V, VGS = 0
A VGS = 30 V, VDS = 0
V VDS = 10 V, ID = 1 mA
ID = 1.2 A, VGS = 10 V Note 4
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss — 165 — pF VDS = 25 V
Coss
21
— pF VGS = 0
Crss
2.6
— pF f = 1 MHz
Turn-on delay time
td(on)
11
— ns ID = 1.2 A
Rise time
Turn-off delay time
Fall time
tr — 12.5 — ns VGS = 10 V
td(off)
22
— ns RL = 208
tf — 22 — ns Rg = 10
Body-drain diode forward voltage
VDF
0.9
1.5 V IF = 2.4 A, VGS = 0 Note 4
Body-drain diode reverse recovery
time
trr
— 235 — ns IF = 2.4 A, VGS = 0
VDD = 400 V
diF/dt = 100 A/s
Note: 4. Pulse test
5. Since this device is equipped with high voltage FET chip (VDSS 500 V), high voltage may be supplied.
Therefore, please be sure to confirm about electric discharge between drain terminal and other terminal.
6. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0844EJ0100 Rev.1.00
Jul 05, 2012
Page 2 of 3


Features RJK5002DJE 500V - 2.4A - MOS FET High Sp eed Power Switching Features  Low on -state resistance RDS(on) = 3.83  ty p. (at ID = 1.2 A, VGS = 10 V, Ta = 25 C)  High speed switching Outline R ENESAS Package code: PRSS0003DC-A (Pack age name: TO-92 Mod) G 321 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-d rain diode reverse drain current Body-d rain diode reverse drain peak current C hannel dissipation VDSS VGSS ID Note1 ID(pulse) Note3 IDR Note1 IDR(pulse) No te3 Pch Note 2 Channel to ambient ther mal Impedance ch-a Channel tempera ture Tch Storage temperature Tstg N otes: 1. Limited by Tch max. 2. Value at Tc = 25C 3. Pulse width limited by safe operating area. Preliminary Da tasheet R07DS0844EJ0100 Rev.1.00 Jul 05 , 2012 D 1. Source 2. Drain 3. Gate S Value 500 30 2.4 4.8 2.4 4.8 0.9 13 9 150 –55 to +150 (Ta = 25C) Unit V V A A A A W C/W C C R07DS0844EJ0100 Rev.1.00 Jul 05, 2012 Page 1 of 3 .
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