Preliminary Datasheet
RJK03P7DPA
MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 30 A, 5.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Features
Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008DD-B (Packa...
