RJK03P7DPA MOS FET Datasheet

RJK03P7DPA Datasheet, PDF, Equivalent


Part Number

RJK03P7DPA

Description

Built in SBD Dual N-channel Power MOS FET

Manufacture

Renesas Technology

Total Page 11 Pages
Datasheet
Download RJK03P7DPA Datasheet


RJK03P7DPA
Preliminary Datasheet
RJK03P7DPA
MOS1 30 V, 15 A, 9.4 mmax.
MOS2 30 V, 30 A, 5.3 mmax.
Built in SBD Dual N-channel Power MOS FET
High Speed Power Switching
R07DS0906EJ0110
Rev.1.10
Nov 01, 2012
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DD-B
(Package name: WPAK-D(3))
5 678
1
G1
234
D1 D1 D1
8
G2
4 32 1
MOS1
9
S1/D2
5678
9
S2 S2 S2
56 7
4321
(Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8 Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 
3. Tc=25C
MOS1
30
±20
15
60
15
8.5
7.23
10
150
–55 to +150
Ratings
MOS2
30
±20
30
120
30
12
14.4
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Page 1 of 10

RJK03P7DPA
RJK03P7DPA
Electrical Characteristics
• MOS1
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.2
Preliminary
Typ
7.8
9.7
36
850
150
80
1.55
7.1
2.3
2.0
2.8
1.7
12.6
3.5
0.84
8.1
Max
±0.5
1
2.5
9.4
12.6
1190
3.1
1.09
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 24 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 7.5 A, VGS = 10 V Note4
ID = 7.5 A, VGS = 4.5 V Note4
ID = 7.5 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 4.5 V
ID = 15 A
VGS =10 V, ID = 7.5 A
VDD 10 V
RL = 1.3
Rg = 4.7
IF = 15 A, VGS = 0 Note4
IF =15 A, VGS = 0
diF/ dt = 500 A/s
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Page 2 of 10


Features Preliminary Datasheet RJK03P7DPA MOS1 3 0 V, 15 A, 9.4 mΩ max. MOS2 30 V, 30 A, 5.3 mΩ max. Built in SBD Dual N-ch annel Power MOS FET High Speed Power Sw itching R07DS0906EJ0110 Rev.1.10 Nov 0 1, 2012 Features  Low on-resistance  Capable of 4.5 V gate drive  Hi gh density mounting  Pb-free  Hal ogen-free Outline RENESAS Package cod e: PWSN0008DD-B (Package name: WPAK-D(3 )) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and Sch ottky Barrier Diode 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source Absolute Ma ximum Ratings Item Symbol Drain to s ource voltage Gate to source voltage Dr ain current Drain peak current Reverse drain current Avalanche current Avalanc he energy Channel dissipation VDSS VGS S ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc=25C MOS1 30 ±20 15 60 15 8.5 7.23 10 150 .
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