IRF7403PBF Power MOSFET Datasheet

IRF7403PBF Datasheet, PDF, Equivalent


Part Number

IRF7403PBF

Description

Power MOSFET

Manufacture

International Rectifier

Total Page 9 Pages
Datasheet
Download IRF7403PBF Datasheet


IRF7403PBF
HEXFET® Power MOSFET
PD - 95301
IRF7403PbF
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
VDSS = 30V
RDS(on) = 0.022
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
9.7
8.5
5.4
34
2.5
0.02
±20
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
–––
Max.
50
Units
°C/W
9/30/04

IRF7403PBF
IRF7403PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max.
30 ––– –––
––– 0.024 –––
––– ––– 0.022
––– ––– 0.035
1.0 ––– –––
8.4 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– 100
––– ––– -100
––– ––– 57
––– ––– 6.8
––– ––– 18
––– 10 –––
––– 37 –––
––– 42 –––
––– 40 –––
––– 2.5 –––
––– 4.0 –––
––– 1200 –––
––– 450 –––
––– 160 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.0A ƒ
VGS = 4.5V, ID = 3.4A ƒ
VDS = VGS, ID = 250µA
VDS = 15V, ID = 4.0A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
ID = 4.0A
VDS = 24V
VGS = 10V, See Fig. 6 and 12 ƒ
VDD = 15V
ID = 4.0A
RG = 6.0
RD = 3.7Ω, See Fig. 10 ƒ
Between lead tip
and center of die contact G
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 3.1
A
showing the
integral reverse
––– ––– 34
p-n junction diode.
G
D
S
––– ––– 1.0
––– 52 78
––– 93 140
V TJ = 25°C, IS = 2.0A, VGS = 0V ƒ
ns TJ = 25°C, IF = 4.0A
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD 4.0A, di/dt 180A/µs, VDD V(BR)DSS,
TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 10sec.


Features HEXFET® Power MOSFET PD - 95301 IRF740 3PbF l Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Re el l Dynamic dv/dt Rating l Fast Switch ing l Lead-Free Description S1 S2 S3 G 4 AA 8D 7D 6D 5D Top View Fifth Gene ration HEXFETs from International Recti fier utilize advanced processing techni ques to achieve the lowest possible on- resistance per silicon area. This benef it, combined with the fast switching sp eed and ruggedized device design that H EXFET Power MOSFETs are well known for, provides the designer with an extremel y efficient device for use in a wide va riety of applications. The SO-8 has be en modified through a customized leadfr ame for enhanced thermal characteristic s and multiple-die capability making it ideal in a variety of power applicatio ns. With these improvements, multiple d evices can be used in an application wi th dramatically reduced board space. Th e package is designed for vapor phase, infra red, or wave solder.
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