NP23N06YDG EFFECT TRANSISTOR Datasheet

NP23N06YDG Datasheet, PDF, Equivalent


Part Number

NP23N06YDG

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

Renesas

Total Page 8 Pages
Datasheet
Download NP23N06YDG Datasheet


NP23N06YDG
NP23N06YDG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0014EJ0100
Rev.1.00
Jul 01, 2010
Description
The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
Logic level drive type
Designed for automotive application and AEC-Q101 qualified
Small size package 8-pin HSON
Ordering Information
Part No.
NP23N06YDG -E1-AY 1
NP23N06YDG -E2-AY 1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) 2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current 3
Repetitive Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
60
±20
±23
±46
60
1.0
175
55 to +175
11
12
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Rth(ch-C) 2.5 °C/W
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
150
°C/W
Notes: 1. TC = 25°C, PW 10 μs, Duty Cycle 1%
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Tch(peak) 150°C, RG = 25 Ω
R07DS0014EJ0100 Rev.1.00
Jul 01, 2010
Page 1 of 6

NP23N06YDG
NP23N06YDG
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Min
1.4
9.0
Typ
1.8
18
22
24
1200
100
70
12
6
36
4
27
5
8
0.9
32
37
Max
1
±100
2.5
27
37
1800
150
130
24
15
72
10
41
1.5
Chapter Title
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5 V, ID = 11.5 A
VGS = 10 V, ID = 11.5 A
VGS = 5 V, ID = 11.5 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 30 V, ID = 11.5 A,
VGS = 10 V,
RG = 0 Ω
VDD = 48 V,
VGS = 10 V,
ID = 23 A
IF = 23 A, VGS = 0 V
IF = 23 A, VGS = 0 V,
di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0014EJ0100 Rev.1.00
Jul 01, 2010
Page 2 of 6


Features NP23N06YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0014EJ0100 Rev.1.00 Jul 01, 2010 Description The NP23N06YDG is N-channel MOS Field Effec t Transistor designed for high current switching applications. Features • Lo w on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A) • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) • Logic level drive ty pe • Designed for automotive applicat ion and AEC-Q101 qualified • Small si ze package 8-pin HSON Ordering Informa tion Part No. NP23N06YDG -E1-AY ∗1 N P23N06YDG -E2-AY ∗1 LEAD PLATING Pur e Sn (Tin) PACKING Tape 2500 p/reel N ote: ∗1. Pb-free (This product does n ot contain Pb in the external electrode .) Package 8-pin HSON, Taping (E1 type ) 8-pin HSON, Taping (E2 type) Absolut e Maximum Ratings (TA = 25°C) Item Dr ain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Cur rent (DC) (TC = 25°C) Drain Current (p ulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) ∗2 .
Keywords NP23N06YDG, datasheet, pdf, Renesas, MOS, FIELD, EFFECT, TRANSISTOR, P23N06YDG, 23N06YDG, 3N06YDG, NP23N06YD, NP23N06Y, NP23N06, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)