RJK0451DPB MOS FET Datasheet

RJK0451DPB Datasheet, PDF, Equivalent


Part Number

RJK0451DPB

Description

Silicon N Channel Power MOS FET

Manufacture

Renesas Technology

Total Page 7 Pages
Datasheet
Download RJK0451DPB Datasheet


RJK0451DPB
RJK0451DPB
40V, 35A, 7.0mmax.
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheet
R07DS0073EJ0200
Rev.2.00
Apr 09, 2013
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 5.5 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
5
D
4 1, 2, 3 Source
G 4 Gate
5 Drain
SSS
123
Application
Switching Mode Power Supply
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-C
Tch
Tstg
Ratings
40
20
35
140
35
17.5
24.5
45
2.78
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive (10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(VGS(off)) which characteristics has been improved.
R07DS0073EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6

RJK0451DPB
RJK0451DPB
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
40
1.2
Typ
5.5
7.0
47
2010
330
140
0.7
14
7.0
3.0
13
4.8
48
6.0
0.83
28
Max
0.1
1
2.5
7.0
9.6
1.1
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0 V
VGS = 20 V, VDS = 0 V
VDS = 40 V, VGS = 0 V
VDS = 10 V, ID = 1 mA
ID = 17.5 A, VGS = 10 V Note4
ID = 17.5 A, VGS = 4.5 V Note4
ID = 17.5 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V,
ID = 35 A
VGS = 10 V, ID = 17.5 A,
VDD 10 V, RL = 0.57 ,
Rg = 4.7
IF = 35 A, VGS = 0 V Note4
IF = 35 A, VGS = 0 V
diF/ dt = 100 A/ s
R07DS0073EJ0200 Rev.2.00
Apr 09, 2013
Page 2 of 6


Features RJK0451DPB 40V, 35A, 7.0m max. Silico n N Channel Power MOS FET Power Switchi ng Preliminary Datasheet R07DS0073EJ02 00 Rev.2.00 Apr 09, 2013 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resi stance RDS(on) = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free O utline RENESAS Package code: PTZZ0005D A-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 1 23 Application  Switching Mode Powe r Supply Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak curre nt Body-drain diode reverse drain curre nt Avalanche current Avalanche energy C hannel dissipation Channel to Case Ther mal Resistance Channel temperature Stor age temperature Notes: 1. PW  10  s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C S ymbol VDSS VGSS ID ID(pulse)Note1 IDR I AP Note 2 EAS Note 2 Pch Note3 ch-C Tch Tstg Ratings 40 20 35 140 35 17.5 24.5 45 2.78 150 –55.
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