IRF7811AVPbF Application-Specific MOSFETs Datasheet

IRF7811AVPbF Datasheet, PDF, Equivalent


Part Number

IRF7811AVPbF

Description

N-Channel Application-Specific MOSFETs

Manufacture

International Rectifier

Total Page 6 Pages
Datasheet
Download IRF7811AVPbF Datasheet


IRF7811AVPbF
IRF7811APVD-P95b26F5
IRF7811AVPbF
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
• 100% RG Tested
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811AV offers an extremely low combination of
Qsw & RDS(on) for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Output Current
(VGS 4.5V)
™Pulsed Drain Current
TA = 25°C
TL = 90°C
Power Dissipation eÃÃÃÃÃÃÃÃÃÃTA = 25°C
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™Pulsed Source Current
SO-8
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
DEVICE CHARACTERISTICS…
RDS(on)
QG
QSW
QOSS
IRF7811AV
11 m
17 nC
6.7 nC
8.1 nC
Symbol
VDS
VGS
ID
IDM
PD
TJ , TSTG
IS
ISM
IRF7811AV
30
±20
10.8
11.8
100
2.5
3.0
-55 to 150
2.5
50
Units
V
A
W
°C
A
Thermal Resistance
Parameter
ehMaximum Junction-to-Ambient
Maximum Junction-to-Lead
www.irf.com
Symbol
RθJA
RθJL
Typ
–––
–––
Max
50
20
Units
°C/W
1
08/17/04

IRF7811AVPbF
IRF7811AVPbF
Electrical Characteristics
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Total Gate Charge, Control FET
Total Gate Charge, Synch FET
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min
V(BR)DSS 30
RDS(on) –––
VGS(th) 1.0
–––
IDSS –––
–––
IGSS –––
Qg –––
Qg
Qgs1
–––
–––
Qgs2 –––
Qgd –––
QSW –––
QOSS
RG
–––
0.5
td(on) –––
tr –––
td(off) –––
tf –––
Ciss –––
Coss –––
Crss –––
Typ Max Units
Conditions
––– ––– V VGS = 0V, ID = 250µA
d11 14 mVGS = 4.5V, ID = 15A
––– 3.0 V VDS = VGS, ID = 250µA
––– 50 µA VDS = 30V, VGS = 0V
––– 20 µA VDS = 24V, VGS = 0V
––– 100 mA VDS = 24V, VGS = 0V, TJ = 100°C
––– ±100 nA VGS = ± 20V
17 26 nC VDS = 24V, ID = 15A, VGS = 5.0V
14 21
VGS = 5.0V, VDS < 100mV
3.4 –––
1.6 –––
5.1 –––
VDS = 16V, ID = 15A
6.7 –––
8.1 12
––– 4.4
VDS = 16V, VGS = 0
8.6 –––
21 –––
43 –––
10 –––
ns VDD = 16V
ID = 15A
VGS = 5.0V
Clamped Inductive Load
1801 –––
723 –––
46 –––
pF VGS = 0V
VDS = 10V
Diode Characteristics
Parameter
Diode Forward Voltage
fReverse Recovery Charge
Reverse Recovery Charge
f(with Parallel Schottsky)
Symbol Min
VSD –––
Qrr –––
Qrr –––
Typ Max Units
Conditions
d––– 1.3 V TJ = 25°C, IS = 15A ,VGS = 0V
50 ––– nC di/dt = 700A/µs
VDD = 16V, VGS = 0V, ID = 15A
43 ––– nC di/dt = 700A/µs , (with 10BQ040)
VDD = 16V, VGS = 0V, ID = 15A
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width 400 µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„ Typ = measured - Qoss
… Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS =5.0V, IF = 15A.
† Rθ is measured at TJ approximately 90°C
2 www.irf.com


Features IRF7811APVD-P95b26F5 IRF7811AVPbF • N -Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switc hing Losses • Minimizes Parallel MOSF ETs for high current applications • 1 00% RG Tested • Lead-Free Descriptio n This new device employs advanced HEXF ET Power MOSFET technology to achieve a n unprecedented balance of on-resistanc e and gate charge. The reduced conducti on and switching losses make it ideal f or high efficiency DC-DC converters tha t power the latest generation of microp rocessors. The IRF7811AV has been opti mized for all parameters that are criti cal in synchronous buck converters incl uding RDS(on), gate charge and Cdv/dt-i nduced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in bot h control and synchronous FET applicati ons. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a t.
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