IRF8113PbF Power MOSFET Datasheet

IRF8113PbF Datasheet, PDF, Equivalent


Part Number

IRF8113PbF

Description

Power MOSFET

Manufacture

International Rectifier

Total Page 10 Pages
Datasheet
Download IRF8113PbF Datasheet


IRF8113PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
l Lead-Free
PD - 95138B
IRF8113PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max Qg Typ.
:30V 5.6m @VGS = 10V 24nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max.
30
± 20
17.2
13.8
135
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
6/29/06

IRF8113PbF
IRF8113PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.024 –––
––– 4.7 5.6
––– 5.8 6.8
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 17.2A
eVGS = 4.5V, ID = 13.8A
1.5 ––– 2.2 V VDS = VGS, ID = 250µA
––– - 5.4 ––– mV/°C
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
73 ––– ––– S VDS = 15V, ID = 13.3A
––– 24 36
––– 6.2 –––
VDS = 15V
––– 2.0 ––– nC VGS = 4.5V
––– 8.5 –––
ID = 13.3A
––– 7.3 –––
See Fig. 16
––– 10.5 –––
––– 10 ––– nC VDS = 10V, VGS = 0V
––– 0.8 1.5
––– 13 –––
eVDD = 15V, VGS = 4.5V
––– 8.9 –––
ID = 13.3A
––– 17 ––– ns Clamped Inductive Load
––– 3.5 –––
––– 2910 –––
––– 600 –––
––– 250 –––
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
48
13.3
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
MOSFET symbol
(Body Diode)
A showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
––– ––– 135
integral reverse
––– ––– 1.0
p-n junction diode.
eV TJ = 25°C, IS = 13.3A, VGS = 0V
––– 34 51 ns TJ = 25°C, IF = 13.3A, VDD = 10V
e––– 21 32 nC di/dt = 100A/µs
www.irf.com


Features Applications l Synchronous MOSFET for No tebook Processor Power l Synchronous Re ctifier MOSFET for Isolated DC-DC Conve rters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free PD - 95138B IRF8113PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg Typ. :30V 5.6m @VGS = 10V 24nC S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings Parame ter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @T A = 25°C PD @TA = 70°C Gate-to-Sourc e Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current fPower Dissip ation fPower Dissipation TJ TSTG Line ar Derating Factor Operating Junction a nd Storage Temperature Range Thermal R esistance Parameter gRθJL Junction-to- Drain Lead fgRθJA Junction-to-Ambient Notes  through … are on page 10 www .irf.com Max. 30 ± 20 17.2 13.8 135 2.5 1.6 0.02 -55 to + 150 Units V .
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