Noise Transistor. LMBT5087LT3G Datasheet


LMBT5087LT3G Transistor. Datasheet pdf. Equivalent


LMBT5087LT3G


Low Noise Transistor
LESHAN RADIO COMPANY, LTD.

Low Noise Transistor
PNP Silicon
• We declare that the material of product compliance with RoHS requirements.

LMBT5087LT1G

ORDERING INFORMATION

Device

Marking

Shipping

LMBT5087LT1G

2Q

3000/Tape & Reel

LMBT5087LT3G

2Q

10000/Tape & Reel

MAXIMUM RATINGS Rating
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous
DEVICE MARKING

Symbol V CEO V CBO V EBO IC

LMBT5087LT1G =2Q

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation RF-5 Board (1) T A =25 °C Derate above 25°C
Thermal Resistance, Junction to Ambient Total Device Dissipation
Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature

Value – 50 – 50 – 3.0 – 50

Unit Vdc Vdc Vdc mAdc

Symbol PD
R θJA PD
R θJA T J , T stg

Max 225
1.8 556 300
2.4 417 –55to+150

3
1 2
SOT– 23 (TO–236AB)

1 BASE

3 COLLECTOR
2 EMITTER

Unit mW
mW/°C °C/W mW
mW/°C °C/W
°C

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –100 µAdc, I E = 0)

V (BR)CEO V (BR)CBO

Collector Cutoff Current

I CBO

(V CB = –10 Vdc, I E= 0)

(V CB = –35 Vdc, I E= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alu...



LMBT5087LT3G
LESHAN RADIO COMPANY, LTD.
Low Noise Transistor
PNP Silicon
We declare that the material of product compliance with RoHS requirements.
LMBT5087LT1G
ORDERING INFORMATION
Device
Marking
Shipping
LMBT5087LT1G
2Q
3000/Tape & Reel
LMBT5087LT3G
2Q
10000/Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
Symbol
V CEO
V CBO
V EBO
IC
LMBT5087LT1G =2Q
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation RF-5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
– 50
– 50
– 3.0
– 50
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
225
1.8
556
300
2.4
417
–55to+150
3
1
2
SOT– 23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 2C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –100 µAdc, I E = 0)
V (BR)CEO
V (BR)CBO
Collector Cutoff Current
I CBO
(V CB = –10 Vdc, I E= 0)
(V CB = –35 Vdc, I E= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Min
– 50
– 50
Max
–10
–50
Unit
Vdc
Vdc
n Adc
1/7

LMBT5087LT3G
LESHAN RADIO COMPANY, LTD.
LMBT5087LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = –100µAdc, V CE = –5.0 Vdc)
(I C = –1.0 mAdc, V CE = –5.0 Vdc)
(I C = –10 mAdc, V CE = –5.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
h FE
V CE(sat)
250
250
250
––
Base–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
V BE(sat)
––
Max
800
––
––
– 0.3
– 0.85
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –500 µAdc, V CE= –5.0 Vdc, f = 20 MHz)
Output Capacitance
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain
(I C= –1.0mAdc, V CE = –5.0Vdc, f = 1.0 kHz)
Noise Figure
f T 40 —
C obo
— 4.0
h fe 250 900
NF
(I C = –20 mAdc, V CE= –5.0 Vdc,Rs=10k, f = 1.0 kHz)
— 2.0
(I C = –100µAdc, V CE= –5.0 Vdc,Rs=3.0k, f = 1.0 kHz)
— 2.0
Unit
––
Vdc
Vdc
MHz
pF
dB
2/7




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