LBC817-40LT3G Purpose Transistors Datasheet

LBC817-40LT3G Datasheet, PDF, Equivalent


Part Number

LBC817-40LT3G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 3 Pages
Datasheet
Download LBC817-40LT3G Datasheet


LBC817-40LT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
LBC817-16LT1G
LBC817-25LT1G
LBC817-40LT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V CEO
V CBO
V EBO
Collector Current — Continuous I C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
DEVICE MARKING
LBC817–16LT1G = 6A; LBC817–25LT1G = 6B; LBC817–40LT1G = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
Emitter–Base Breakdown Voltage
(I E = –1.0 µA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CBO
45
50
5.0
Typ
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
Max Unit
—V
—V
—V
100 nA
5.0 µA
1/3

LBC817-40LT3G
LESHAN RADIO COMPANY, LTD.
LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C= 100 mA, V CE = 1.0 V)
LBC817–16
LBC817–25
LBC817–40
(I C = 500 mA, V CE = 1.0 V)
Collector–Emitter Saturation Voltage
(I C = 500 mA, I B = 50 mA)
Base–Emitter On Voltage
( I C = 500 mA, V CE = 1.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Output Capacitance
(V CB = 10 V, f = 1.0 MHz)
h FE
V CE(sat)
V BE(on)
fT
C obo
100 — 250
160 — 400
250 — 600
40 — —
— — 0.7 V
— — 1.2 V
100 — — MHz
— 10 — pF
ORDERING INFORMATION
Device
LBC817-16LT1G
LBC817-16LT3G
LBC817-25LT1G
LBC817-25LT3G
LBC817-40LT1G
LBC817-40LT3G
Marking
6A
6A
6B
6B
6C
6C
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
2/3


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors NPN Silicon • We decl are that the material of product compli ance with RoHS requirements. LBC817-16 LT1G LBC817-25LT1G LBC817-40LT1G MAXIM UM RATINGS Rating Symbol Collector Emitter Voltage Collector–Base Volta ge Emitter–Base Voltage V CEO V CBO V EBO Collector Current — Continuous I C Value 45 50 5.0 500 Unit V V V m Adc THERMAL CHARACTERISTICS Characteri stic Total Device Dissipation FR– 5 B oard, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambien t Total Device Dissipation Alumina Subs trate, (2) TA = 25°C Derate above 25° C Thermal Resistance, Junction to Ambie nt Junction and Storage Temperature Sy mbol PD R θJA PD R θJA T J , T stg M ax Unit 225 mW 1.8 mW/°C 556 °C/W 3 00 2.4 417 –55 to +150 mW mW/°C °C /W °C DEVICE MARKING LBC817–16LT1G = 6A; LBC817–25LT1G = 6B; LBC817–4 0LT1G = 6C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collecto.
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