L2SC3838QLT3G Amplifier Transistor Datasheet

L2SC3838QLT3G Datasheet, PDF, Equivalent


Part Number

L2SC3838QLT3G

Description

High-Frequency Amplifier Transistor

Manufacture

Leshan Radio Company

Total Page 2 Pages
Datasheet
Download L2SC3838QLT3G Datasheet


L2SC3838QLT3G
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features
1.High transition frequency.(Typ.fT=3.2GHz)
2.Small rbb`Cc and high gain.(Typ.4ps)
3.Small NF.
4.We declare that the material of product compliance with RoHS requirements.
4.S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
20
Collector-Emitter Voltage
VCEO
11
Emitter-base voltage
VEBO
3
Collector Current
IC 50
Collector power dissipation
PC 0.2
Junction temperature
Tj 150
Storage temperature
Tstg -55~+150
Unit
V
V
V
mA
W
°C
°C
DEVICE MARKING
L2SC3838QLT1G;S-L2SC3838QLT1G=APQ
L2SC3838QLT1G
S-L2SC3838QLT1G
3
1
2
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
z ORDERING INFORMATION
Device
L2SC3838QLT1G
S-L2SC3838QLT1G
L2SC3838QLT3G
S-L2SC3838QLT3G
Package
SOT-23
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
20
11
3
-
-
-
120
1.4
-
Collector-base time constant
rbb`Cc
-
Noise factor
NF -
Typ Max. Unit Conditions
- - V IC=10µA
- - V IC=1mA
- - V IE=10µA
- 0.5 µA VCB=10V
- 0.5 µA VEB= 2 V
- 0.5 V IC/IB=10mA/5mA
- 270 - VCE/IC=10V/5mA
3.2 - GHz VCE=10V, IE=-10mA, f=500MHz
0.8 1.5 pF VCB=10V, IE=0A, f=1MHz
4 12 ps VCB=10V, IC=10mA, f=31.8MHz
3.5 - dB VCE=6V, IC=2mA, f=500MHz,Rg=50
Rev.O 1/2

L2SC3838QLT3G
LESHAN RADIO COMPANY, LTD.
L2SC3838QLT1G ;S-L2SC3838QLT1G
SOT-23
A
L
3
BS
12
VG
C
D H KJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037
0.95
0.035
0.9
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
Rev.O 2/2


Features LESHAN RADIO COMPANY, LTD. High-Frequen cy Amplifier Transistor z Features 1.H igh transition frequency.(Typ.fT=3.2GHz ) 2.Small rbb`Cc and high gain.(Typ.4ps ) 3.Small NF. 4.We declare that the mat erial of product compliance with RoHS r equirements. 4.S- Prefix for Automotive and Other Applications Requiring Uniqu e Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TA = 25°C unless othe rwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 20 Coll ector-Emitter Voltage VCEO 11 Emitte r-base voltage VEBO 3 Collector Curr ent IC 50 Collector power dissipation PC 0.2 Junction temperature Tj 150 Storage temperature Tstg -55~+150 Un it V V V mA W °C °C DEVICE MARKING L 2SC3838QLT1G;S-L2SC3838QLT1G=APQ L2SC3 838QLT1G S-L2SC3838QLT1G 3 1 2 SOT-23 COLLECTOR 3 1 BASE 2 EMITTER z ORD ERING INFORMATION Device L2SC3838QLT1G S-L2SC3838QLT1G L2SC3838QLT3G S-L2SC38 38QLT3G Package SOT-23 SOT-23 Shipping 3000/Tape & Reel 10000/Ta.
Keywords L2SC3838QLT3G, datasheet, pdf, Leshan Radio Company, High-Frequency, Amplifier, Transistor, 2SC3838QLT3G, SC3838QLT3G, C3838QLT3G, L2SC3838QLT3, L2SC3838QLT, L2SC3838QL, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)