L9014RLT1G Purpose Transistors Datasheet

L9014RLT1G Datasheet, PDF, Equivalent


Part Number

L9014RLT1G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 4 Pages
Datasheet
Download L9014RLT1G Datasheet


L9014RLT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽComplementary to L9014.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9014QLT1G
Series
S-L9014QLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9014QLT1G
S-L9014QLT1G
Marking
14Q
Shipping
3000/Tape&Reel
L9014QLT3G S-L9014QLT3G
14Q
10000/Tape&Reel
L9014RLT1G S-L9014RLT1G 14R
3000/Tape&Reel
L9014RLT3G S-L9014RLT3G 14R
10000/Tape&Reel
L9014SLT1G S-L9014SLT1G 14S
3000/Tape&Reel
L9014SLT3G S-L9014SLT3G 14S
10000/Tape&Reel
L9014TLT1G S-L9014TLT1G 14T
3000/Tape&Reel
L9014TLT3G S-L9014TLT3G 14T
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
Value
45
50
5
100
Unit
V
V
V
mA
THERMAL CHARATEERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
PD
225 mW
1.8 mW/ oC
Thermal Resistance, Junction to Ambient R©JA
556 o C/W
Total Device Dissipation
PD
Alumina Substrate, (2) TA=25 oC
300 mW
Derate above 25oC
2.4 mW/ oC
Thermal Resistance, Junction to Ambient R©JA
417 oC /W
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
TJ ,Tstg
-55 to +150 o C
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4

L9014RLT1G
LESHAN RADIO COMPANY, LTD.
L9014QLT1G Series
S-L9014QLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100­A)
Collector-Base Breakdown Voltage
(IC=100­A)
Collector Cutoff Current (VCB=40V)
Emitter Cutoff Current (VEB=3V)
ON CHARACTERISTICS
Symbol
V(BR)CEO
Min
45
V(BR)EBO
5
V(BR)CBO
50
ICBO
IEBO
-
Typ
-
-
-
-
DC Current Gain
(IC=1mA, VCE=5V)
Collector-Emitter Saturation Voltage
(IC=100mA,IB=5mA)
HFE 150
VCE -
-
-
NOTE:
*
QRS
T
HFE 150~300 200~400 300~600 400~1000
Max
-
-
-
100
100
1000
0.3
Unit
V
V
V
nA
nA
V
Rev.O 2/4


Features LESHAN RADIO COMPANY, LTD. General Purpo se Transistors NPN Silicon FEATURE ƽC omplementary to L9014. ƽWe declare tha t the material of product compliance wi th RoHS requirements. ƽS- Prefix for A utomotive and Other Applications Requir ing Unique Site and Control Change Requ irements; AEC-Q101 Qualified and PPAP C apable. L9014QLT1G Series S-L9014QLT1G Series DEVICE MARKING AND ORDERING IN FORMATION Device L9014QLT1G S-L9014QL T1G Marking 14Q Shipping 3000/Tape&Re el L9014QLT3G S-L9014QLT3G 14Q 10000 /Tape&Reel L9014RLT1G S-L9014RLT1G 14R 3000/Tape&Reel L9014RLT3G S-L9014RLT 3G 14R 10000/Tape&Reel L9014SLT1G S-L 9014SLT1G 14S 3000/Tape&Reel L9014SLT 3G S-L9014SLT3G 14S 10000/Tape&Reel L 9014TLT1G S-L9014TLT1G 14T 3000/Tape&R eel L9014TLT3G S-L9014TLT3G 14T 10000 /Tape&Reel MAXIMUM RATINGS Rating Coll ector-Emitter Voltage Collector-Base Vo ltage Emitter-Base Voltage Collector cu rrent-continuoun Symbol VCEO VCBO VEBO IC Value 45 50 5 100 Unit V V V mA THERMAL CHARATEERISTICS Ch.
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