LMBT6428LT1G Amplifier Transistors Datasheet

LMBT6428LT1G Datasheet, PDF, Equivalent


Part Number

LMBT6428LT1G

Description

Amplifier Transistors

Manufacture

Leshan Radio Company

Total Page 5 Pages
Datasheet
Download LMBT6428LT1G Datasheet


LMBT6428LT1G
LESHAN RADIO COMPANY, LTD.
Amplifier Transistors
NPN Silicon
z We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
(S-)LMBT6428LT1G
(S-)LMBT6428LT3G
(S-)LMBT6429LT1G
(S-)LMBT6429LT3G
Marking
1KM
1KM
M1L
M1L
Shipping
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
MAXIMUM RATINGS
Rating
Value
Symbol 6428LT1 6429LT1 Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
50 45
60 55
6.0
200
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
LMBT6428LT1G
LMBT6429LT1G
S-LMBT6428LT1G
S-LMBT6429LT1G
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
3
COLLECTOR
1
BASE
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
2
EMITTER
(S-)LMBT6428LT1G = 1KM, (S-)LMBT6429LT1G = M1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
Vdc
(I C = 1.0 mAdc, I B = 0)
LMBT6428LT1G
50 —
(I C = 1.0 mAdc, I B = 0)
LMBT6429LT1G
45 —
Collector–Base Breakdown Voltage
V (BR)CBO
Vdc
(I C = 0.1mAdc, I E = 0)
LMBT6428LT1G
60 —
(I C = 0.1mAdc, I E = 0)
LMBT6429LT1G
55 —
Collector Cutoff Current
I CES
µAdc
( V CE = 30Vdc, )
— 0.1
Collector Cutoff Current
I CBO
µAdc
( V CB = 30Vdc, I E = 0 )
— 0.01
Emitter Cutoff Current
( V EB = 5.0Vdc, I C= 0)
I EBO — 0.01 µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/5

LMBT6428LT1G
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
S-LMBT6428LT1G S-LMBT6429LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(I C = 0.01 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
hFE
(I C = 0.1 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
(I C = 10 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 0.5 mAdc)
(I C = 100 mAdc, I B = 5.0 mAdc)
Base–Emitter On Voltage
(I C = 1.0 mAdc, V CE = 5.0mAdc)
VCE(sat)
V BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz)
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz)
fT
C obo
C ibo
Min
250
500
250
500
250
500
250
500
––
––
0.56
100
––
––
Max
650
1250
0.2
0.6
0.66
Unit
––
Vdc
Vdc
700 MHz
3.0 pF
8.0 pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Rev.O 2/5


Features LESHAN RADIO COMPANY, LTD. Amplifier Tr ansistors NPN Silicon z We declare tha t the material of product compliance wi th RoHS requirements. z S- Prefix for A utomotive and Other Applications Requir ing Unique Site and Control Change Requ irements; AEC-Q101 Qualified and PPAP C apable. ORDERING INFORMATION Device (S -)LMBT6428LT1G (S-)LMBT6428LT3G (S-)LMB T6429LT1G (S-)LMBT6429LT3G Marking 1KM 1KM M1L M1L Shipping 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 100 00/Tape & Reel MAXIMUM RATINGS Rating Value Symbol 6428LT1 6429LT1 Unit Col lector–Emitter Voltage V CEO Collec tor–Base Voltage V CBO Emitter–Ba se Voltage V EBO Collector Current Continuous I C 50 45 60 55 6.0 200 Vdc Vdc Vdc mAdc THERMAL CHARACTERISTI CS LMBT6428LT1G LMBT6429LT1G S-LMBT642 8LT1G S-LMBT6429LT1G 3 1 2 CASE 318–0 8, STYLE 6 SOT–23 (TO–236AB) 3 COLL ECTOR 1 BASE Characteristic Total Devi ce Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dis.
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