LMBTA70LT3G Purpose Transistors Datasheet

LMBTA70LT3G Datasheet, PDF, Equivalent


Part Number

LMBTA70LT3G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 6 Pages
Datasheet
Download LMBTA70LT3G Datasheet


LMBTA70LT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
z We declare that the material of product compliance with RoHS requirements.
Ordering Information
LMBTA70LT1G
Device
LMBTA70LT1G
LMBTA70LT3G
Marking
M2C
M2C
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–40
–4.0
–100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBTA70LT1G = M2C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current
( V CB = –30Vdc, I E = 0)
ON CHARACTERISTICS
DC Current Gain(I C = –5.0mAdc, V CE = –10 Vdc)
Collector–Emitter Saturation Voltage(I C = –10mAdc, I B = –1.0 mAdc)
V (BR)CEO
V (BR)EBO
I CBO
hFE
VCE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(I C = –5.0mAdc, V CE= –10Vdc, f = 100MHz)
Output Capacitance(V CB = –10Vdc, I E = 0, f = 1.0 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
fT
C obo
Min
–40
–4.0
40
––
125
––
Max Unit
–– Vdc
–100
Vdc
nAdc
400
–0.25
––
Vdc
–– MHz
4.0 pF
1/6

LMBTA70LT3G
LESHAN RADIO COMPANY, LTD.
LMBTA70LT1G
TYPICAL NOISE CHARACTERISTICS
(V CE = –5.0 Vdc, T A = 25°C)
10
7.0
5.0
3.0
2.0 1.0 mA
I C = 10 µA
BANDWIDTH = 1.0 Hz
R S ~~ 0
30 µA
100 µA
300 µA
1.0
10 20
50 100 200 500 1.0k 2.0k 5.0k 10k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10 20
I C = 1.0 mA
BANDWIDTH = 1.0 Hz
R S ~~
300 µA
100 µA
30 µA
10 µA
50 100 200 500 1.0k 2.0k 5.0k 10k
f, FREQUENCY (Hz)
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V CE = –5.0 Vdc, T A = 25°C)
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100 200 300 500 700 1.0k
I C , COLLECTOR CURRENT (mA)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100 200 300 500 700 1.0k
I C , COLLECTOR CURRENT (mA)
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100
200 300 500 700 1.0k
I C , COLLECTOR CURRENT (mA)
Figure 5. Wideband
Noise Figure is Defined as:
NF = 20 log 10 ( –en––2 +44KKTTRRS+SIn2RS2–)1/ 2
e n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I n = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10 –23 j/°K)
T = Temperature of the Source Resistance (°K)
R s = Source Resistance (Ohms)
2/6


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistor PNP Silicon z We declar e that the material of product complian ce with RoHS requirements. Ordering Inf ormation LMBTA70LT1G Device LMBTA70LT 1G LMBTA70LT3G Marking M2C M2C Shippi ng 3000/Tape&Reel 10000/Tape&Reel MAXI MUM RATINGS Rating Symbol Collector Emitter Voltage V CEO Emitter–Bas e Voltage V EBO Collector Current — Continuous I C Value –40 –4.0 – 100 Unit Vdc Vdc mAdc THERMAL CHARACT ERISTICS Characteristic Total Device Di ssipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissi pation Alumina Substrate, (2) TA = 25° C Derate above 25°C Thermal Resistance , Junction to Ambient Junction and Stor age Temperature Symbol PD RθJA PD Rθ JA TJ , Tstg Max Unit 225 mW 1.8 mW/ C 556 °C/W 300 mW 2.4 417 –55 to + 150 mW/°C °C/W °C 3 1 2 CASE 318 08, STYLE 6 SOT–23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LMBTA70LT1G = M2C ELECTRICAL CHARACTERISTICS (TA =.
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