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L2SD2114KVLT1
Epitaxial planar type NPN silicon transistor
Description
LESHAN RADIO COMPANY, LTD. Epitaxial planar type
NPN
silicon
transistor
zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K*LT1 3 1 2 SOT– 23 (TO–236AB) zAbsolute maximum ratings...
Leshan Radio Company
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