LMBTA13LT3G Amplifier Transistors Datasheet

LMBTA13LT3G Datasheet, PDF, Equivalent


Part Number

LMBTA13LT3G

Description

Darlington Amplifier Transistors

Manufacture

Leshan Radio Company

Total Page 6 Pages
Datasheet
Download LMBTA13LT3G Datasheet


LMBTA13LT3G
LESHAN RADIO COMPANY, LTD.
Darlington Amplifier Transistors
z We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
(S-)LMBTA13LT1G
(S-)LMBTA14LT1G
(S-)LMBTA13LT3G
(S-)LMBTA14LT3G
Marking
1M
1N
1M
1N
Shipping
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
MAXIMUM RATINGS
LMBTA13LT1G
LMBTA14LT1G
S-LMBTA13LT1G
S-LMBTA14LT1G
3
Rating
Symbol
Collector–Emitter Voltage
V CES
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
30
30
10
300
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
1
2
SOT–23
1
BASE
COLLECTOR
3
2
EMITTER
DEVICE MARKING
(S-)LMBTA13LT1G = 1M; (S-)LMBTA14 LT1G = 1N;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 100 µAdc, V BE = 0)
Collector Cutoff Current
( V CB = 30Vdc, I E = 0)
Emitter Cutoff Current
( V EB = 10Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
I CBO
I EBO
30
Max Unit
— Vdc
100 nAdc
100 nAdc
Rev.O 1/6

LMBTA13LT3G
LESHAN RADIO COMPANY, LTD.
LMBTA13LT1G LMBTA14LT1G
S-LMBTA13LT1G S-LMBTA14LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS (3)
DC Current Gain
(I C = 10 mAdc, V CE = 5.0 Vdc)
LMBTA13
LMBTA14
hFE
5,000
10,000
(I C = 100mAdc, V CE = 5.0Vdc)
LMBTA13
10,000
LMBTA14
20,000
Collector–Emitter Saturation Voltage
(I C = 100 mAdc, I B = 0.1 mAdc)
Base–Emitter On Voltage
(I C = 100mAdc, V CE = 5.0Vdc)
VCE(sat)
V BE
––
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4)
(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
fT 125
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
4. f T = |h f e | *f test .
Max Unit
––
1.5 Vdc
2.0 Vdc
— MHz
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Rev.O 2/6


Features LESHAN RADIO COMPANY, LTD. Darlington A mplifier Transistors z We declare that the material of product compliance wit h RoHS requirements. z S- Prefix for Au tomotive and Other Applications Requiri ng Unique Site and Control Change Requi rements; AEC-Q101 Qualified and PPAP Ca pable. ORDERING INFORMATION Device (S -)LMBTA13LT1G (S-)LMBTA14LT1G (S-)LMBTA 13LT3G (S-)LMBTA14LT3G Marking 1M 1N 1 M 1N Shipping 3000/Tape & Reel 3000/Ta pe & Reel 10000/Tape & Reel 10000/Tape & Reel MAXIMUM RATINGS LMBTA13LT1G LM BTA14LT1G S-LMBTA13LT1G S-LMBTA14LT1G 3 Rating Symbol Collector–Emitter V oltage V CES Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Ther mal Resistance, Junction to Ambient Tot al Device Dissipation Alumina Substrate , (2) TA = 25°C Derate above 25°C The rmal Resistance, Junction to Ambient Junction and Storage Temperature Value .
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