PNP Silicon. LMBTA56LT3G Datasheet


LMBTA56LT3G Silicon. Datasheet pdf. Equivalent


Part Number

LMBTA56LT3G

Description

Driver Transistors PNP Silicon

Manufacture

Leshan Radio Company

Total Page 5 Pages
Datasheet
Download LMBTA56LT3G Datasheet


LMBTA56LT3G
LESHAN RADIO COMPANY, LTD.
Driver Transistors
PNP Silicon
FEATURES
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LMBTA56LT1G
LMBTA56LT3G
Marking
2GM
2GM
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS(Ta = 25)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Limits
-80
-80
-4.0
-500
THERMAL CHARACTERISTICS
Parameter
Symbol
Total Power Dissipation FR-5
PD
Board,(Note 1.)@Ta = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
RθJA
Total Power Dissipation Alumina
Substrate,(Note 2.)@Ta = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
PD
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Limits
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
°C/W
°C/W
mW
°C/W
°C/W
°C
LMBTA56LT1G
S-LMBTA56LT1G
3
1
2
SOT–23
3
COLLECTOR
1
BASE
Unit
Vdc
Vdc
Vdc
mAdc
2
EMITTER
July , 2015
Rev .A 1/5

LMBTA56LT3G
LESHAN RADIO COMPANY, LTD.
LMBTA56LT1G,S-LMBTA56LT1G
ELECTRICAL CHARACTERISTICS (Ta= 25)
Characteristic
Symbol
Collector–Emitter Breakdown Voltage(Note 3.) VBR(CEO)
(IC = - 1 mAdc, I B = 0)
Emitter–Base Breakdown Voltage
(I E = -100 μAdc, I C = 0)
VBR(EBO)
Collector Cutoff Current
ICES
(V CE = - 60 Vdc, I E = 0)
Collector Cutoff Current
ICBO
(V CB = - 80 Vdc, I E = 0)
DC Current Gain
hFE
(I C = -10 mAdc, V CE = -1 Vdc)
(I C = -100 mAdc, V CE = -1 Vdc)
Collector–Emitter Saturation Voltage
VCE(sat)
(I C = -100mAdc, I B = -10 mAdc)
Base–Emitter On Voltage
VBE(on)
(I C = -100mAdc, V CE = -1 mAdc)
Current–Gain — Bandwidth Product(Note 4.)
fT
(I C = -100mAdc, V CE= -1Vdc, f = 100MHz)
3. Pulse Test: Pulse Width 300 μs, Duty Cycle2.0%.
4. fT is defined as the frequency at which |hfe | extrapolates to unity.
Min.
-80
-4
100
100
50
Typ. Max.
––
––
-0.1
-0.1
––
––
-0.25
-1.20
––
Unit
V
V
μA
μA
V
V
MHz
TURN−ON TIME
−1.0 V
VCC
+40 V
TURN−OFF TIME +VBB
VCC
+40 V
5.0 ms
+10 V
0
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Fig. 1 Switching Time Test Circuits
July , 2015
Rev .A 2/5


Features LESHAN RADIO COMPANY, LTD. Driver Trans istors PNP Silicon ●FEATURES 1) We d eclare that the material of product com pliant with RoHS requirements and Halog en Free. 2) S- Prefix for Automotive an d Other Applications Requiring Unique S ite and Control Change Requirements; AE C-Q101 Qualified and PPAP Capable. ● DEVICE MARKING AND ORDERING INFORMATION Device LMBTA56LT1G LMBTA56LT3G Marki ng 2GM 2GM Shipping 3000/Tape&Reel 100 00/Tape&Reel ●MAXIMUM RATINGS(Ta = 2 5℃) Parameter Collector–Emitter Vol tage Collector–Base Voltage Emitter Base Voltage Collector Current — Con tinuous Symbol VCEO VCBO VEBO IC Limi ts -80 -80 -4.0 -500 ●THERMAL CHARAC TERISTICS Parameter Symbol Total Pow er Dissipation FR-5 PD Board,(Note 1. )@Ta = 25°C Derate above 25°C Therma l Resistance – Junction-to-Ambient R θJA Total Power Dissipation Alumina S ubstrate,(Note 2.)@Ta = 25°C Derate ab ove 25°C Thermal Resistance, Junction- to-Ambient PD RθJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.
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