Voltage Transistor. LMBTA92LT1G Datasheet


LMBTA92LT1G Transistor. Datasheet pdf. Equivalent


Part Number

LMBTA92LT1G

Description

High Voltage Transistor

Manufacture

Leshan Radio Company

Total Page 4 Pages
Datasheet
Download LMBTA92LT1G Datasheet


LMBTA92LT1G
LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
FEATURE
ƽHigh voltage.
ƽFor Telephony or Professional communication equipment applications.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
(S-)LMBTA92LT1G
2D
3000/Tape&Reel
(S-)LMBTA92LT3G
2D
10000/Tape&Reel
(S-)LMBTA93LT1G
2E
3000/Tape&Reel
(S-)LMBTA93LT3G
2E
10000/Tape&Reel
LMBTA92LT1G
LMBTA93LT1G
S-LMBTA92LT1G
S-LMBTA93LT1G
3
1
2
SOT–23
MAXIMUM RATINGS
Rating
Value
Symbol LMBTA92 LMBTA93 Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
–300 –200 Vdc
–300 –200 Vdc
–5.0 Vdc
–500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
Rev.A 1/4

LMBTA92LT1G
LESHAN RADIO COMPANY, LTD.
LMBTA92LT1G LMBTA93LT1G
S-LMBTA92LT1G S-LMBTA93LT1G
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
Collector Cutoff Current
( VCB = –200Vdc, IE = 0)
( VCB = –300Vdc, IE = 0)
Collector Cutoff Current
( VEB = –6.0Vdc, IC = 0)
( VEB = –5.0Vdc, IC = 0)
LMBTA92
LMBTA93
LMBTA92
LMBTA93
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS (3)
DC Current Gain
(I C =–1.0mAdc, V CE = –10 Vdc)
(I C = –10 mAdc, V CE = –10Vdc)
(I C = –30mAdc, V CE =–10 Vdc)
Collector–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
Base–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
Both Types
Both Types
LMBTA92
LMBTA93
LMBTA92
LMBTA93
hFE
VCE(sat)
V BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
Collector – Base Capacitance
(V CB = –20 Vdc, I E = 0, f = 1.0 MHz)
LMBTA92
LMBTA93
fT
C cb
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min
–300
–200
–300
–200
–5.0
Min
25
40
25
25
––
––
50
––
––
Max Unit
Vdc
Vdc
–0.1
–100
–0.05
–100
Vdc
µAdc
µAdc
µAdc
Max
––
––
––
––
–0.5
–0.5
–0.9
Unit
Vdc
Vdc
–– MHz
pF
6.0
8.0
Rev.A 2/4


Features LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon FEATURE ƽHigh voltage. ƽFor Telephony or Profession al communication equipment applications . ƽWe declare that the material of pro duct compliance with RoHS requirements. ƽS- Prefix for Automotive and Other A pplications Requiring Unique Site and C ontrol Change Requirements; AEC-Q101 Qu alified and PPAP Capable. DEVICE MARKI NG AND ORDERING INFORMATION Device Ma rking Shipping (S-)LMBTA92LT1G 2D 3 000/Tape&Reel (S-)LMBTA92LT3G 2D 100 00/Tape&Reel (S-)LMBTA93LT1G 2E 3000 /Tape&Reel (S-)LMBTA93LT3G 2E 10000/ Tape&Reel LMBTA92LT1G LMBTA93LT1G S-LM BTA92LT1G S-LMBTA93LT1G 3 1 2 SOT–23 MAXIMUM RATINGS Rating Value Symbol L MBTA92 LMBTA93 Unit Collector–Emitte r Voltage V CEO Collector–Base Volt age V CBO Emitter–Base Voltage V E BO Collector Current — Continuous I C –300 –200 Vdc –300 –200 Vdc –5.0 Vdc –500 mAdc THERMAL CHA RACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate ab.
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