silicon transistor. L2SD2114KVLT3G Datasheet


L2SD2114KVLT3G transistor. Datasheet pdf. Equivalent


L2SD2114KVLT3G


NPN silicon transistor
Epitaxial planar type

LESHAN RADIO COMPANY, LTD.

NPN silicon transistor

L2SD2114KVLT1G Series

zFeatures 1) High DC current gain.

S-L2SD2114KVLT1G Series

hFE = 1200 (Typ.)

2) High emitter-base voltage. VEBO =12V (Min.)

3

3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

1 2

4) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

SOT– 23 (TO–236AB)

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Collector-base voltage Collector-emitter voltage Emitter-base voltage

VCBO VCEO VEBO

Collector current

IC

Collector power dissipation
Junction temperature Storage temperature
∗ Single pulse Pw=100ms

PC
Tj Tstg

Limits 25 20 12 0.5 1
0.2
150 −55∼+150

Unit V V V
A(DC)
A(Pulse) ∗
W
°C °C

COLLECTOR 3

1 BASE

2 EMITTER

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage

BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat)

25 20 12 − − −

− − − − − 0.18

− − − 0.5 0.5 0.4

V IC=10µA V IC=1mA V IE=10µA µA VCB=20V µA VEB=10V V IC/IB=500mA/20mA

DC current transfer ratio
Transition f...



L2SD2114KVLT3G
Epitaxial planar type
LESHAN RADIO COMPANY, LTD.
NPN silicon transistor
L2SD2114KVLT1G Series
zFeatures
1) High DC current gain.
S-L2SD2114KVLT1G Series
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
1
2
4) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SOT– 23 (TO–236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power
dissipation
Junction temperature
Storage temperature
Single pulse Pw=100ms
PC
Tj
Tstg
Limits
25
20
12
0.5
1
0.2
150
55∼+150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
COLLECTOR
3
1
BASE
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
25
20
12
0.18
0.5
0.5
0.4
V IC=10µA
V IC=1mA
V IE=10µA
µA VCB=20V
µA VEB=10V
V IC/IB=500mA/20mA
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
hFE 820 2700 VCE=3V, IC=10mA
fT350 MHz VCE=10V, IE=−50mA, f=100MHz
Cob 8.0 pF VCB=10V, IE=0A, f=1MHz
Ron 0.8 pF IB=1mA, Vi=100mV(rms), f=1kHz
ƽ hFE Values Classification, Device Marking and Ordering Information
Device
L2SD2114KVLT1G
S-L2SD2114KVLT1G
hFE
820~1800
Marking
BV
Shipping
3000/Tape&Reel
L2SD2114KVLT3G
S-L2SD2114KVLT3G
820~1800
BV 10000/Tape&Reel
L2SD2114KWLT1G
S-L2SD2114KWLT1G
L2SD2114KWLT3G
S-L2SD2114KWLT3G
1200~2700
1200~2700
BW 3000/Tape&Reel
BW 10000/Tape&Reel
Rev.O 1/4

L2SD2114KVLT3G
zElectrical characteristic curves
2.0
Ta=25˚C
1.6 2.0µA
1.8µA
1.2
1.6µA
1.4µA
1.2µA
1.0µA
0.8µA
0.8
0.6µA
0.4µA
0.4
0.2µA
0 IB=0
0 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.1 Grounded emitter output
characteristics(Ι)
LESHAN RADIO COMPANY, LTD.
L2SD2114KVLT1G Series
S-L2SD2114KVLT1G Series
1000
1.8mA 2.0mA
1.6mA
1.4mA
800
1.2mA
1.0mA
600 0.8mA
0.6mA
400 0.4mA
0.2mA
200
Ta=25°C
Measured using
0 IB=0mA pulse current.
0 2 4 6 8 10
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output
characteristics(ΙΙ)
1000
500
200
100
50
Ta=100°C
25°C
25°C
VCE=3V
Measured using
pulse current.
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
2000
1000
500
200
100
50
Ta=25°C
Measured using
pulse current.
VCE=5V
3V
1V
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC(mA)
Fig.4 DC current gain vs. collector
current(Ι)
10000
5000
2000
1000
500
200
100
50
VCE=3V
Measured using
pulse current.
Ta=100°C
25°C
25°C
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC(mA)
Fig.5 DC current gain vs.
collector current(ΙΙ)
2000
1000
500
Ta=25°C
Measured using
pulse current.
200
100
50
IC/IB=100
20 50
25
10 10
5
2
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current(Ι)
2000
1000
500
IC/IB=25
Measured using
pulse current.
200
100
Ta=100°C
50 25°C
25°C
20
10
5
2
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current(ΙΙ)
10000
5000
2000
1000
500
IC/IB=10
25
50
100
Ta=25°C
Pulsed
200
100
50
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC(mA)
Fig.8 Base-emitter saturation
voltage vs. collector current(Ι)
10000
5000
2000
1000
500
Ta=−25°C
25°C
100°C
lC/lB=10
Measured using
pulse current.
200
100
50
20
10
12
5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current(ΙΙ)
Rev.O 2/4




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