Purpose Transistors. L8550HQLT1G Datasheet

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L8550HQLT1G Datasheet
Recommendation L8550HQLT1G Datasheet
Part L8550HQLT1G
Description General Purpose Transistors
Feature L8550HQLT1G; LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽHigh current capacity i.
Manufacture Leshan Radio Company
Datasheet
Download L8550HQLT1G Datasheet




Leshan Radio Company L8550HQLT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽHigh current capacity in compact package.
ƽEpitaxial planar type.
ƽPNP complement: L8550H
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550HPLT1G
s-L8550HPLT1G
1HB
3000/Tape&Reel
L8550HPLT3G
L8550HQLT1G
s-L8550HPLT3G
s-L8550HQLT1G
1HB
1HD
10000/Tape&Reel
3000/Tape&Reel
L8550HQLT3G
L8550HRLT1G
s-L8550HQLT3G
s-L8550HRLT1G
1HD
1HF
10000/Tape&Reel
3000/Tape&Reel
L8550HRLT3G
L8550HSLT1G
s-L8550HRLT3G
s-L8550HSLT1G
1HF
1HH
10000/Tape&Reel
3000/Tape&Reel
L8550HSLT3G
s-L8550HSLT3G 1HH
10000/Tape&Reel
L8550HPLT1G
Series
S-L8550HPLT1G
Series
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Max
-25
-40
-5
-1500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Symbol
PD
R θJ A
PD
Max
Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R θJ A
T j,T St g
417
-55 to +150
°C/W
°C
Rev.A 1/3



Leshan Radio Company L8550HQLT1G
LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
Series
S-L8550HPLT1G
Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
V(BR)CEO
-25
Emitter-Base Breakdown Voltage
(IE=-100 µΑ)
V(BR)EBO
-5
Collector-Base Breakdown Voltage
(IC=-100 µΑ)
V(BR)CBO
-40
Collector Cutoff Current (VCB=-35V)
ICBO
Emitter Cutoff Current (VEB=-4V)
IEBO – –
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS
-150
-150
V
V
V
nA
nA
Max
Unit
DC Current Gain
IC=-100mA,VCE=-1V
Collector-Emitter Saturation Voltage
(IC=-800mA,I B =-80mA)
HFE
VCE(S)
100
-
- 600
- -0.5 V
NOTE :
*
P
hFE 100~200
Q
150~300
R
200~400
S
300~600
Rev.A 2/3



Leshan Radio Company L8550HQLT1G
LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
Series
S-L8550HPLT1G
Series
SOT-23
A
L
3
BS
12
VG
C
D H KJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L
0.0350 0.0401 0.89
1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
Rev.A 3/3







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