Preliminary Datasheet
RJK03R4DPA
MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
R07DS0888EJ0110 Rev.1.10
Oct 29, 2012
Features
Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008DD-B (Packa...
