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RJK0855DPB

Silicon N-Channel Power MOSFET

Description

RJK0855DPB 80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1056EJ0200 (Pr...

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RJK0855DPB Silicon N-Channel Power MOSFET - Renesas Technology

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