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RJK1055DPB

Silicon N-Channel MOSFET

Description

RJK1055DPB 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1058EJ0200 (Pre...

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RJK1055DPB Silicon N-Channel MOSFET - Renesas Technology

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