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CEF630N

Part Number	CEF630N
Manufacturer	CET
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Aug 29, 2015
Detailed Description	CEP630N/CEB630N CEF630N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP630N CEB630N CEF630N VDSS...
Datasheet	CEF630N PDF File

Overview

CEP630N/CEB630N CEF630N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP630N CEB630N CEF630N VDSS 200V 200V 200V RDS(ON) 0.
36Ω 0.
36Ω 0.
36Ω ID @VGS 9A 10V 9A 10V 9A d 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 200 ±20...

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CEF630N N-Channel Enhancement Mode Field Effect Transistor - CET

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