N-Channel Enhancement Mode Field Effect Transistor
Description
CEP14G04/CEB14G04
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 140A, RDS(ON) = 3.6mΩ @VGS = 10V. RDS(ON) = 6.5mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-2...