2A/ 500V/ 2.50 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
Description
FSL430D, FSL430R
June 1998
2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupt...
