N-Channel Enhancement Mode Field Effect Transistor
Description
CEM6426
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4.7A, RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C...
