WNM2306
N-Channel, 20V, 3.2A, Power MOSFET
WNM2306
Http://www.willsemi.com
V(BR)DSS 20
Rds(on) (Max. m) 45 @ 4.5V 55 @ 2.5V 66 @ 1.8V
Descriptions
The WNM2306 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conver...
