N-Channel MOSFET. MDP18N50 Datasheet

MDP18N50 MOSFET. Datasheet pdf. Equivalent

Part MDP18N50
Description N-Channel MOSFET
Feature MDP18N50 N-channel MOSFET 500V Preliminary – Subject to change without notice MDP18N50 N-Channel MO.
Manufacture MagnaChip
Datasheet
Download MDP18N50 Datasheet



MDP18N50
Preliminary – Subject to change without notice
MDP18N50
N-Channel MOSFET 500V, 18.0 A, 0.27
General Description
The MDP18N50 uses advanced Magnachips
MOSFET Technology, which provides low on-
state resistance, high switching performance
and excellent quality.
MDP18N50 is suitable device for SMPS, HID
and general purpose applications.
Features
VDS = 500V
ID = 18.0A @VGS = 10V
RDS(ON) < 0.27@VGS = 10V
Applications
Power Supply
HID
Lighting
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
±30
18
11
72
236
1.89
4.5
950
-55~150
Unit
V
V
A
A
72
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
0.53
Unit
oC/W
Ordering Information
Part Number
MDP18N50
Feb2009. Version 1.0
Temp. Range
-55~150oC
1
Package
TO-220
Packing
Tube
MagnaChip Semiconductor Ltd.



MDP18N50
Preliminary – Subject to change without notice
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 9A
VDS = 40V, ID = 9A
VDS = 400V, ID = 18A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 18A,
RG = 25Ω(3)
IS = 18A, VGS = 0V
IF = 18A, dl/dt = 100A/µs(3)
Min Typ Max Unit
500 -
3.0 -
-
V
5.0
- - 1 µA
- - 100 nA
0.22 0.27 Ω
- 13 - S
- 48
- 12
- 15
- 2430
- 10
- 302
- 58
- 74
- 110
- 44
nC
pF
ns
- 18 - A
- 1.4 V
- 375
ns
- 4.2
µC
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 9.0A, di/dt200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=5.3mH, IAS=18.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C
Feb2009. Version 1.0
2 MagnaChip Semiconductor Ltd.





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