2SC4913. C4913 Datasheet

C4913 2SC4913. Datasheet pdf. Equivalent

Part C4913
Description 2SC4913
Feature 2SC4913 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown vo.
Manufacture Hitachi Semiconductor
Datasheet
Download C4913 Datasheet



C4913
2SC4913
Silicon NPN Triple Diffused
Application
High voltage amplifier
Features
High breakdown voltage
V(BR)CEO = 2000 V min
Outline
TO-220AB
1
23
1. Base
2. Collector
(Flange)
3. Emitter



C4913
2SC4913
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC
Tj
Tstg
Ratings
2000
2000
6
20
40
1.5
150
–55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Symbol
I CES
I CEO
I EBO
hFE
VCE(sat)
Min
10
Typ
Max Unit
500 µA
5 mA
500 µA
5.0 V
Test conditions
VCE = 2000 V, RBE = 0
VCE = 2000 V, RBE =
VEB = 6 V, IC = 0
VCE = 5 V, IC = 1 mA
IC = 10 mA, IB = 2 mA
Maximum Collector Power Dissipation Curve
2.0
1.5
1.0
0.5
0 50 100 150 200
Ambient Temperature Ta (°C)
Area of Safe Operation
100
50 ic(peak)
1 shot pulse
Ta = 25°C
20 I Cmax
10
0.5
0.2
0.1
100 200 500 1000 2000 5000
Collector to Emitter Voltage VCE (V)
2





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