N-channel MOSFET. BUK7K29-100E Datasheet

BUK7K29-100E MOSFET. Datasheet pdf. Equivalent

Part BUK7K29-100E
Description Dual N-channel MOSFET
Feature LFPAK56D BUK7K29-100E Dual N-channel 100 V, 24.5 mΩ standard level MOSFET 2 September 2015 Produ.
Manufacture NXP Semiconductors
Datasheet
Download BUK7K29-100E Datasheet



BUK7K29-100E
BUK7K29-100E
Dual N-channel 100 V, 24.5 mΩ standard level MOSFET
2 September 2015
Product data sheet
1. General description
Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to AEC
Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 5 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 100 V
- - 29.5 A
- - 68 W
- 19.5 24.5 mΩ
- 13.1 - nC
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BUK7K29-100E
NXP Semiconductors
BUK7K29-100E
Dual N-channel 100 V, 24.5 mΩ standard level MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 S1 source1
2 G1 gate1
3 S2 source2
4 G2 gate2
5 D2 drain2
6 D2 drain2
7 D1 drain1
8 D1 drain1
Simplified outline
8765
Graphic symbol
D1 D1
D2 D2
1234
LFPAK56D (SOT1205)
S1 G1 S2 G2
mbk725
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7K29-100E
LFPAK56D
Description
Plastic single ended surface mounted package
(LFPAK56D); 8 leads
Version
SOT1205
7. Marking
Table 4. Marking codes
Type number
BUK7K29-100E
Marking code
72910E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
Tmb = 100 °C; VGS = 10 V; Fig. 2
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3
BUK7K29-100E
All information provided in this document is subject to legal disclaimers.
Product data sheet
2 September 2015
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 68 W
- 29.5 A
- 22 A
- 126 A
© NXP Semiconductors N.V. 2015. All rights reserved
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