LINEARITY AMPLIFIER. RFLA1018 Datasheet

RFLA1018 AMPLIFIER. Datasheet pdf. Equivalent

Part RFLA1018
Description VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER
Feature RFLA1018Variable Gain Low Noise High Linearity Amplifier RFLA1018 VARIABLE GAIN LOW NOISE HIGH LIN.
Manufacture RFMD
Datasheet
Download RFLA1018 Datasheet



RFLA1018
RFLA1018Vari-
able Gain Low
Noise High Lin-
earity Amplifier
RFLA1018
VARIABLE GAIN LOW NOISE HIGH LINEARITY
AMPLIFIER
Package Style: MCM 16-Pin, 8.0mm x 8.0mm
Features
Frequency Range 1850MHz to
2050MHz
Internally Matched to 50on All
RF Ports
Analog Voltage Variable
Attenuator with 3.3V Control
Range
Bypass Mode of LNA for High
Dynamic Range
Max Gain = 35dB min.
Noise Figure of 0.65dB Typical
Gain Control Range = 35dB
High IIP3 = 2dBm
Single +5V Supply
Small 16-Pin, 8.0mm x 8.0mm,
Multi-Chip Module (MCM)
Applications
Cellular Base station, Remote
Radio Heads
Active Antenna Radios
3G, LTE Infrastructure
Low Noise, Variable Gain with
High Linearity
RFIN 1
GND 2
SCN 3
GND 4
16 15
56
14 13
12 RFOUT
11 GND
10 GND
9 VVA_CTRL
78
Functional Block Diagram
Product Description
RFMD's RFLA1018 is an analog-controlled voltage-variable gain amplifier featuring
high linearity and very low noise figure. This LNA with bypass mode and variable
attenuator provides a minimum 35dB of dynamic gain range. The RFLA1018 has a
3.3V control range with maximum gain at 0V. The LNA is temperature compensated
to reduce gain variation. A noise figure of 0.65dB and an IIP3 of 2dBm make this
component ideal for receiver input lineups. The RFLA1018 is packaged in a small
8.0mm x 8.0mm leadless laminate MCM. This module is internally matched to 50
on all RF ports, making it easy to use with no external matching components
required.
Ordering Information
RFLA1018SR
RFLA1018SQ
RFLA1018TR7
RFLA1018TTR13
RFLA1018PCK-410
7" Reel with 100 pieces
Sample Bag with 25 pieces
7" Reel with 750 pieces
13" Reel with 2500 pieces
1850MHz to 2050MHz PCBA with 5-piece sample bag
DS141218
GaAs HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
InGaP HBT
Si BiCMOS
SiGe HBT
Si CMOS
Si BJT
BiFET HBT
SOI
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 12



RFLA1018
RFLA1018
Absolute Maximum Ratings
Parameter
Supply Voltage
Control Voltage
DC Supply Current
Power Dissipation
Max RF Input Power
Operating Temperature (TCASE)
Storage Temperature
Max Junction Temperature (TJ)
ESD Rating (HBM)
Moisture Sensitivity Level
Rating
+5.5
+5.5
400
2000
27
-40 to +85
-40 to +150
160
1000 (Class 1C)
MSL3
Unit
VDC
VDC
mA
mW
dBm
°C
°C
°C
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
Specification
Min. Typ. Max.
High Gain Mode Data: 1920MHz to 1980MHz
Frequency Range
1920
1980
Max Gain
36 38
Gain Flatness
0.75
1.1
Min. Gain
12 18.7
OIP3
38
IIP3 3
IIP3 6
IIP3 8
IIP3 9.5
OP1dB (Max Gain)
25.5
IP1dB
-9.5
IP1dB
-1.5
NF 0.65
Input Return Loss
-25
Output Return Loss
-18
Low Gain Mode Data: 1920MHz to 1980MHz
Frequency Range
1920
1980
Max Gain
20.3
22
Gain Flatness
0.25
1.1
Min. Gain
-4 3
OIP3
36
IIP3 19
IIP3 20.5
IIP3 19
IIP3 21
Unit Condition
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
MHz
Temp = 25°C, VCC = 5V, Standard Application Circuit
Attenuation = Min, VVA_CV = 0V
Max Gain, Attenuation = Min, VVA_CV = 0V
32dB to 35dB Gain
30dB to 31dB Gain
25dB to 29dB Gain
18dB to 24dB Gain
Attenuation = Min, VVA_CV = 0V
30dB to 35dB Gain
18dB to 24dB Gain
Max Gain, Attenuation = Min, VVA_CV = 0V
Temp = 25°C, VCC = 5V, Standard Application Circuit
Attenuation = Min, VVA_CV = 0V
dB
dBm
dBm
dBm
dBm
dBm
(Max Gain)Attenuation = Min, VVA_CV = 0V
16dB to17dB Gain
12dB to 15dB Gain
5dB to 11dB Gain
1dB to 4dB Gain
2 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS141218





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)