Pch MOSFET. SP8M51 Datasheet

SP8M51 MOSFET. Datasheet pdf. Equivalent

Part SP8M51
Description 4V Drive Nch + Pch MOSFET
Feature Data Sheet 4V Drive Nch + Pch MOSFET SP8M51  Structure Silicon N-channel MOSFET/ Silicon P-channe.
Manufacture Rohm
Datasheet
Download SP8M51 Datasheet



SP8M51
Data Sheet
4V Drive Nch + Pch MOSFET
SP8M51
Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Dimensions (Unit : mm)
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
(8) (5)
(1) (4)
Application
Switching
Inner circuit
Packaging specifications
(8) (7) (6) (5)
Type
SP8M51
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta = 25C)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
2
2
1 1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
Limits
Tr1 : N-ch Tr2 : P-ch
Unit
VDSS
VGSS
ID
IDP *1
Is
Isp *1
100
±20
3.0
12
1.0
12
100
±20
2.5
10
1.0
10
V
V
A
A
A
A
PD *2
2.0 W / TOTAL
1.4 W / ELEMENT
Tch 150
Tstg 55 to 150
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/10
2011.02 - Rev.A



SP8M51
SP8M51
Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l *
Ciss
Coss
Crss
td(on) *
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
100
-
1.0
-
-
-
3.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
120
130
135
-
610
55
35
13
13
50
14
8.5
1.8
3.5
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max.
10
-
1
2.5
170
180
190
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=±20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=100V, VGS=0V
V VDS=10V, ID=1mA
ID=3.0A, VGS=10V
mID=3.0A, VGS=4.5V
ID=3.0A, VGS=4.0V
S VDS=10V, ID=3.0A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns ID=1.5A, VDD 50V
ns VGS=10V
ns RL=33
ns RG=10
nC ID=3.0A
nC VDD 50V
nC VGS=5V
Max.
1.2
Unit Conditions
V Is=3.0A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/10
2011.02 - Rev.A





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