Power MOSFET. IRFZ48ZSPbF Datasheet

IRFZ48ZSPbF MOSFET. Datasheet pdf. Equivalent

Part IRFZ48ZSPbF
Description Power MOSFET
Feature PD - 95574A IRFZ48ZPbF IRFZ48ZSPbF Features l Advanced Process Technology l Ultra Low On-Resistan.
Manufacture International Rectifier
Datasheet
Download IRFZ48ZSPbF Datasheet



IRFZ48ZSPbF
PD - 95574A
IRFZ48ZPbF
IRFZ48ZSPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
IRFZ48ZLPbF
HEXFET® Power MOSFET
D VDSS = 55V
G RDS(on) = 11m
S ID = 61A
TO-220AB
IRFZ48ZPbF
D2Pak
TO-262
IRFZ48ZSPbF IRFZ48ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
61
43
240
91
0.61
± 20
73
120
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
1.64
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/27/10



IRFZ48ZSPbF
IRFZ48Z/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage 55
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
2.0
–––
0.054
8.6
–––
–––
–––
11
4.0
V
V/°C
m
V
VGS = 0V, ID = 250µA
fReference to 25°C, ID = 1mA
VGS = 10V, ID = 37A
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
24 ––– –––
S VDS = 25V, ID = 37A
IDSS
Drain-to-Source Leakage Current
––– ––– 20
µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 43 64 nC ID = 37A
Qgs Gate-to-Source Charge
––– 11 16
VDS = 44V
fQgd
Gate-to-Drain ("Miller") Charge
––– 16 24
VGS = 10V
td(on)
Turn-On Delay Time
––– 15 ––– ns VDD = 28V
tr Rise Time
––– 69 –––
ID = 37A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 35 –––
––– 39 –––
fRG = 12
VGS = 10V
LD Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 1720 –––
––– 300 –––
––– 160 –––
––– 1020 –––
––– 230 –––
––– 380 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
IS Continuous Source Current
Min. Typ. Max. Units
Conditions
––– ––– 61
MOSFET symbol
D
(Body Diode)
A showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– ––– 240
––– ––– 1.3
integral reverse
G
fp-n junction diode.
S
V TJ = 25°C, IS = 37A, VGS = 0V
trr Reverse Recovery Time
––– 20 31
ns TJ = 25°C, IF = 37A, VDD = 30V
fQrr Reverse Recovery Charge ––– 13 20 nC di/dt = 100A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L =0.11mH,
RG = 25, IAS = 37A, VGS =10V. Part not
recommended for use above this value.
ƒ ISD 37A, di/dt 920A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
2
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
www.irf.com





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