Power MOSFET. IRF8302MPBF Datasheet

IRF8302MPBF MOSFET. Datasheet pdf. Equivalent

Part IRF8302MPBF
Description Power MOSFET
Feature IRF8302MPbF l RoHs Compliant and Halogen-Free  l Integrated Monolithic Schottky Diode l Low Profil.
Manufacture International Rectifier
Datasheet
Download IRF8302MPBF Datasheet



IRF8302MPBF
IRF8302MPbF
l RoHs Compliant and Halogen-Free 
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
HEXFET® Power MOSFET plus Schottky Diode ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.4m@ 10V 2.2m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ideal for CPU Core DC-DC Converters
35nC 8.9nC 5.1nC 40nC 29nC 1.8V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MX
DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT MP
Description
The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8302MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8302MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Base Part number
IRF8302MPbF
Package Type
DirectFET MX
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF8302MTRPbF
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
6
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
5 ID = 31A
4
3 TJ = 125°C
2
1 TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20
14.0
12.0 ID= 25A
10.0
8.0
Max.
30
±20
31
25
190
250
260
25
VDS= 24V
VDS= 15V
VDS= 6.0V
Units
V
A
mJ
A
6.0
4.0
2.0
0.0
0 10 20 30 40 50 60 70 80 90 100
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.83mH, RG = 25, IAS = 25A.
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 17, 2014



IRF8302MPBF
IRF8302MPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
120
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
4.0
1.4
2.2
1.8
-4.2
–––
–––
–––
–––
–––
35
11
5.1
8.9
10
14
29
1.3
22
37
20
15
6030
1360
560
Typ.
–––
–––
–––
30
40
Max. Units
Conditions
–––
–––
1.8
2.7
2.35
–––
100
5.0
100
-100
–––
53
V VGS = 0V, ID = 1.0mA
mV/°C Reference to 25°C, ID = 10mA
imVGS = 10V, ID = 31A
iVGS = 4.5V, ID = 25A
V VDS = VGS, ID = 150µA
mV/°C VDS = VGS, ID = 10mA
µA VDS = 24V, VGS = 0V
mA VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 25A
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 25A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
Ãi2.2
––– VDD = 15V, VGS = 4.5V
––– ns ID = 25A
––– RG = 1.8
––– See Fig. 17
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Max. Units
Conditions
31 MOSFET symbol
A showing the
250 integral reverse
0.80
p-n junction diode.
iV TJ = 25°C, IS = 25A, VGS = 0V
i45 ns TJ = 25°C, IF = 25A
60 nC di/dt = 300A/µs
Notes:
‡ Pulse width 400µs; duty cycle 2%.
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 17, 2014





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